Organic luminescence transistor device and manufacturing method thereof

1. An organic luminescence transistor device comprising a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view,

an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

a luminescent layer provided on an upper surface of the electric-charge injection layer, and

a second electrode layer provided on a side of an upper surface of the luminescent layer.

2. An organic luminescence transistor device comprising

a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode,

an electric-charge-injection inhibiting layer provided on the whole upper surface of the first electrode and on a partial upper surface of the electric-charge injection layer, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

a luminescent layer provided on the upper surface of the electric-charge injection layer at an area not provided with the electric-charge-injection inhibiting layer, and

a second electrode layer provided on a side of an upper surface of the electric-charge-injection inhibiting layer and on a side of an upper surface of the luminescent layer.

3. An organic luminescence transistor device according to claim 1 , wherein

a thickness of the electric-charge injection layer is greater than a thickness of the first electrode.

4. An organic luminescence transistor device according to claim 1 , wherein

the electric-charge injection layer is made of a coat-type electric-charge injection material.

5. An organic luminescence transistor device according to claim 1 , wherein

a second electric-charge injection layer made of the same material as or a different material from the electric-charge injection material is provided between the insulation film and the first electrode and the electric-charge injection material.

6. An organic luminescence transistor device according to claim 1 , wherein

a third electric-charge injection layer for the second electrode layer is provided between the luminescent layer and the second electrode layer.

7. An organic luminescence transistor device according to claim 1 , wherein

an electric-charge transfer layer is provided between the luminescent layer and the third electric-charge injection layer.

8. An organic luminescence transistor device according to claim 1 , wherein

the electric-charge-injection inhibiting layer is made of an insulation material.

9. An organic luminescence transistor device according to claim 1 , wherein

the first electrode functions as an anode, and the second electrode functions as a cathode.

10. An organic luminescence transistor device according to claim 1 , wherein

the first electrode functions as a cathode, and the second electrode functions as an anode.

11. An organic luminescence transistor comprising

an organic luminescence transistor device according to claim 1 ,

a first voltage-feeding unit configured to apply a constant voltage between the first electrode and the second electrode of the organic luminescence transistor device, and

a second voltage-feeding unit configured to apply a variable voltage between the first electrode and the assistance electrode of the organic luminescence transistor device.

12. A luminescence display apparatus comprising a plurality of luminescent parts arranged in a matrix pattern, wherein

each of the plurality of luminescent parts has an organic luminescence transistor device according to claim 1 .

13. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 1 , the manufacturing method comprising the steps of:

preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,

providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area larger than a predetermined size in a plan view,

providing an electric-charge-injection inhibiting layer on an upper surface of the first electrode such that the electric-charge-injection inhibiting layer has a shape larger than the predetermined size of the first electrode in a plan view,

etching an edge portion of the first electrode until the edge portion of the first electrode is located inside an edge portion of the electric-charge-injection inhibiting layer such that the first electrode is made into the predetermined size,

providing an electric-charge injection layer by coating the upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer, with a coat-type electric-charge injection material, after the step of etching,

providing another electric-charge injection layer on an upper surface of the electric-charge-injection inhibiting layer,

providing a luminescent layer on an upper surface of the electric-charge injection layer, and

providing a second electrode layer on a side of an upper surface of the luminescent layer.

14. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 2 , the manufacturing method comprising the steps of:

preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,

providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area larger than a predetermined size in a plan view,

providing an electric-charge-injection inhibiting layer on an upper surface of the first electrode such that the electric-charge-injection inhibiting layer has a shape larger than the predetermined size of the first electrode in a plan view,

etching an edge portion of the first electrode until the edge portion of the first electrode is located inside an edge portion of the electric-charge-injection inhibiting layer such that the first electrode is made into the predetermined size,

providing an electric-charge injection layer by coating the upper surface of the insulation film at an area not provided with the first electrode, with a coat-type electric-charge injection material, after the step of etching,

providing a luminescent layer on an upper surface of the electric-charge injection layer, and

providing a second electrode layer on a side of an upper surface of the electric-charge-injection inhibiting layer and on a side of an upper surface of the luminescent layer.

15. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 1 , the manufacturing method comprising the steps of:

preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,

providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area of a predetermined size,

providing an electric-charge injection layer on the side of an upper surface of the insulation film at an area not provided with the first electrode,

providing an electric-charge-injection inhibiting layer on the whole upper surface of the first electrode and on a partial upper surface of the electric-charge injection layer such that the electric-charge-injection inhibiting layer has a shape larger than that of the first electrode in a plan view,

providing another electric-charge injection layer on the upper surface of the electric-charge injection layer at an area not provided with the electric-charge-injection inhibiting layer,

providing another electric-charge injection layer on an upper surface of the electric-charge-injection inhibiting layer,

providing a luminescent layer on an upper surface of the electric-charge injection layer, and

providing a second electrode layer on a side of an upper surface of the luminescent layer.

16. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 2 , the manufacturing method comprising the steps of:

preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,

providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area of a predetermined size,

providing an electric-charge injection layer on the side of an upper surface of the insulation film at an area not provided with the first electrode,

providing an electric-charge-injection inhibiting layer on the whole upper surface of the first electrode and on a partial upper surface of the electric-charge injection layer such that the electric-charge-injection inhibiting layer has a shape larger than that of the first electrode in a plan view,

providing a luminescent layer on the upper surface of the electric-charge injection layer at an area not provided with the electric-charge-injection inhibiting layer, and

providing a second electrode layer on a side of an upper surface of the electric-charge-injection inhibiting layer and on a side of an upper surface of the luminescent layer.

17. A manufacturing method of an organic luminescence transistor device according to claim 13 , wherein

a step of providing a second electric-charge injection layer made of the same material as or a different material from the electric-charge injection layer on the upper surface of the insulation film is conducted, before the step of providing the first electrode.

18. An organic transistor device comprising

a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

an organic semiconductor layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode and the electric-charge-injection inhibiting layer, and

a second electrode layer provided on a side of an upper surface of the organic semiconductor layer.

19. An organic luminescence transistor device comprising

a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

a luminescent layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer, and

a second electrode layer provided on a side of an upper surface of the luminescent layer,

wherein

the luminescent layer includes an electric-charge-injection-layer material.

20. An organic luminescence transistor device comprising

a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

a luminescent layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer, and

a second electrode layer provided on a side of an upper surface of the luminescent layer,

wherein

the luminescent layer includes an electric-charge-injection-layer material.

21. An organic luminescence transistor device comprising

a substrate,

an assistance electrode layer provided on a side of an upper surface of the substrate,

an insulation film provided on a side of an upper surface of the assistance electrode layer,

a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,

an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, wherein the electric-charge-injection inhibiting layer is made of a material that inhibits both holes and electrons from being transported therethrough,

a luminescent layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer, and

a second electrode layer provided on a side of an upper surface of the electric-charge-injection inhibiting layer and on a side of an upper surface of the luminescent layer,

wherein

the luminescent layer includes an electric-charge-injection-layer material.

22. An organic luminescence transistor device according to claim 1 , wherein the electric-charge injection layer is provided directly on the upper surface of the electric-charge-injection inhibiting layer.

23. An organic luminescence transistor device according to claim 2 , wherein the electric-charge-injection inhibiting layer is directly on the partial upper surface of the electric-charge injection layer.

24. An organic luminescence transistor device according to claim 19 , wherein the luminescent layer is provided directly on the upper surface of the electric-charge-injection inhibiting layer.