Field effect transistor and process for production thereof
A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.
1. A field effect transistor having a gate electrode, a gate-insulating layer, a channel and source and drain electrodes connected electrically to the channel, the channel comprising an amorphous oxide semiconductor containing Zn or In, and the source electrode or the drain electrode comprising an oxynitride containing Zn or In and having an optical band gap to absorb near-ultraviolet light.
2. The field effect transistor according to claim 1 , wherein the metallic element contained in the amorphous oxide semiconductor and the metallic element contained in the oxynitride are the same.
3. The field effect transistor according to claim 2 , wherein the amorphous oxide semiconductor contains Zn, In and O, and the oxynitride contains a crystal which contains Zn, In, O and N.
4. The field effect transistor according to claim 1 , wherein the compositional ratio of oxygen and nitrogen contained in the oxynitride is represented by the relational expression (1):
(Nitrogen atoms)/(Nitrogen atoms+Oxygen atoms)≧0.01 (1).
5. The field effect transistor according to claim 1 , wherein an optical band gap of the oxynitride is smaller than an optical band gap of the amorphous oxide semiconductor.
6. The field effect transistor according to claim 1 , wherein the source electrode and the drain electrode are a source region and a drain region formed by addition of nitrogen to the amorphous oxide semiconductor constituting the channel.