Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
View Patent ↗According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
1. A thin film transistor comprising:
a substrate;
a non-single crystal semiconductor thin film directly or indirectly formed on the substrate;
a crystal grain which is grown in a lateral direction from a crystal seed provided on the semiconductor thin film and crystallized in a longer shape in a crystal growth direction <110> than in a width direction, an average grain width of the crystal grain is in the range of 0.2 μm to 0.8 μm;
a crystal grain array in which the crystal grains are aligned adjacently in the width direction; and
a source region and a drain region formed such that current flows across a plurality of the crystal grains of the crystal grain array in the crystal growth direction <110>,
a channel region provided between the source region and the drain region,
wherein a crystal orientation of a plane of each of the crystal grains formed in the channel region is {001} to {112}.
2. A semiconductor device comprising:
a substrate;
a non-single crystal semiconductor thin film directly or indirectly formed on the substrate;
a crystal grain which is grown in a lateral direction from a crystal seed provided on the semiconductor thin film and crystallized in a longer shape in a crystal growth direction <110> than in a width direction, an average grain width of the crystal grain is in the range of 0.2 μm to 0.8 μm;
a crystal grain array in which the crystal grains are aligned adjacently in the width direction;
a thin film transistor including a source region and a drain region formed such that current flows across a plurality of the crystal grains of the crystal grain array in the crystal growth direction <110>, and electrons or holes moving within a channel region move in parallel to boundaries of the crystal grains; and
a wiring being connected to the source region and the drain region, respectively,
wherein a crystal orientation of a plane of each of the crystal grains formed in the channel region is {001} to {112}.
3. The semiconductor device according to claim 2 , wherein a thickness of the non-single crystal semiconductor thin film is in the range of 30 nm to 100 nm, and the crystal grain has a grain length in the range of 2 μm to 15 μm.