Memory device and memory programming method
Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page.
1. A memory device comprising:
a multi-level cell array that includes a plurality of multi-level cells;
a programming unit that programs a first data page in the plurality of multi-level cells and programs data from a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed;
an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and
a controller that adjusts the read voltage level of the first data page depending on the determination result.
2. The memory device of claim 1 , wherein the controller comprises:
a reader that applies the read voltage level to the plurality of multi-level cells to read the first data page; and
a read voltage level adjustment unit that adjusts the read voltage level depending on the determination result.
3. The memory device of claim 1 , wherein:
the controller adjusts the read voltage level based on the read error information of the first data page, and
the programming unit programs the second data page based on the first data page and the adjusted read voltage level.
4. The memory device of claim 1 , wherein the controller adjusts the read voltage level based on additional information corresponding to the first data page.
5. The memory device of claim 4 , wherein the additional information comprises at least one of location information of the plurality of multi-level cells with the programmed first data page, programming sequence information associated with a programming sequence of the first data page, program/erase (P/E) cycle information, charge loss information, information associated with a number of bits of the read error, and bit ordering information.
6. The memory device of claim 1 , wherein:
the read error information comprises error counting information associated with a number of error bits of the first data page,
when the error counting information is beyond the range of an error correcting limit, the memory device corrects the read error, and
when the read error is corrected, the programming unit programs the second data page.
7. The memory device of claim 6 , wherein, when the error counting information is within the range of the error correcting limit, the controller adjusts the read voltage level based on the error counting information.
8. The memory device of claim 6 , wherein, when the error counting information is within the range of the error correcting limit, the programming unit programs the second data page in the multi-level cell with the programmed first data page.
9. The memory device of claim 1 , wherein:
the read error information comprises error detection information associated with the first data page, and
the error analysis unit determines whether to correct the read error based on the error detection information.
10. The memory device of claim 9 , wherein the controller adjusts the read voltage level of the first data page based on the error detection information.
11. The memory device of claim 1 , wherein the controller repeats re-reading of the first data page in a predetermined number of loops based on the adjusted read voltage level.
12. The memory device of claim 1 , wherein the error analysis unit applies an error correction decoding time spent for correction of the read error and the adjusted read voltage level to the plurality of multi-level cells to perform comparison and analysis for a read time spent for reading of the first data page.
13. The memory device of claim 12 , wherein, when the error correction decoding time is less than the read time, the controller does not adjust the read voltage level.
14. The memory device of claim 12 , wherein, when the error correction decoding time is greater than or equal to the read time, the controller adjusts the read voltage level.
15. A memory programming method comprising:
programming a first data page in a plurality of multi-level cells;
analyzing read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information;
adjusting the read voltage level of the first data page depending on the determination result; and
programming a second data page in a multi-level cell, from among the plurality of multi-level cells in which the first data page is programmed, based on the read voltage level and the first data page.
16. A computer-readable recording medium storing a program for implementing the method of claim 15 .