Semiconductor device
A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101 ; a through electrode 129 extending through the silicon substrate 101 ; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101 . In addition, the semiconductor device 100 also includes a protruding portion 146 , being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129 , and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
1. A semiconductor device, comprising:
a semiconductor substrate ( 101 );
a through electrode ( 129 ) extending through the semiconductor substrate; and
an annular cylindrical insulating film ( 130 ), being provided in a circumference of a side surface of the through electrode ( 129 ) and extending through the semiconductor substrate ( 101 ),
wherein the side surface of the through electrode ( 129 ) in the semiconductor substrate ( 101 ) has a first region at an exterior surface side of the semiconductor substrate ( 101 ) and a second region in an internal side of the semiconductor substrate ( 101 ), and
wherein the first region is substantially perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 ), and the second region is non-perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 ).
2. The semiconductor device according to claim 1 , further comprising:
a protruding portion ( 146 ) being provided between the annular cylindrical insulating film ( 130 ) and the first region.
3. The semiconductor device according to claim 2 , wherein the protruding portion ( 146 ) is made from the same material that the semiconductor substrate ( 101 ) is made from.
4. The semiconductor device according to claim 1 , further comprising:
an insulating film ( 139 ) covering the surface of the semiconductor substrate ( 101 ).
5. The semiconductor device according to claim 4 , wherein the through electrode ( 129 ) extends through the insulating film ( 139 ) via an opening ( 145 ) in the insulating film ( 139 ).
6. The semiconductor device according to claim 5 , wherein a diameter of the opening ( 145 ) is smaller than a maximum diameter of the through electrode ( 129 ).
7. The semiconductor device according to claim 1 , wherein an innermost portion ( 131 ) of said annular cylindrical insulating film ( 130 ) is annular and cylindrical and an outermost portion ( 135 ) is annular and cylindrical.
8. A semiconductor device, comprising:
a semiconductor substrate ( 101 );
a through electrode ( 129 ) extending through the semiconductor substrate;
an annular cylindrical insulating film ( 130 ), being provided in a circumference of a side surface of the through electrode ( 129 ) and extending through the semiconductor substrate ( 101 ),
wherein the side surface of the through electrode ( 129 ) in the semiconductor substrate ( 101 ) has a first region at an exterior surface side of the semiconductor substrate ( 101 ) and a second region in an internal side of the semiconductor substrate ( 101 ), and
wherein the first region is substantially perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 ), and the second region is non-perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 );
a protruding portion ( 146 ) being provided between the annular cylindrical insulating film ( 130 ) and the first region,
wherein the protruding portion ( 146 ) is made from the same material that the semiconductor substrate ( 101 ) is made from.
9. The semiconductor device according to claim 8 , further comprising:
an insulating film ( 139 ) covering the surface of the semiconductor substrate ( 101 ).
10. The semiconductor device according to claim 9 , wherein the through electrode ( 129 ) extends through the insulating film ( 139 ) via an opening ( 145 ) in the insulating film ( 139 ).
11. The semiconductor device according to claim 10 , wherein a diameter of the opening ( 145 ) is smaller than a maximum diameter of the through electrode ( 129 ).
12. The semiconductor device according to claim 8 , wherein an innermost portion ( 131 ) of said annular cylindrical insulating film ( 130 ) is annular and cylindrical and an outermost portion ( 135 ) is annular and cylindrical.
13. A semiconductor device, comprising:
a semiconductor substrate ( 101 );
an insulating film ( 139 ) located on an exterior surface side of the semiconductor substrate ( 101 );
a through electrode ( 129 ) extending through the semiconductor substrate and the insulating film ( 139 ); and
an annular cylindrical insulating film ( 130 ), being provided in a circumference of a side surface of the through electrode ( 129 ) and extending through the semiconductor substrate ( 101 ),
wherein the side surface of the through electrode ( 129 ) in the semiconductor substrate ( 101 ) has a first region at the exterior surface side of the semiconductor substrate extending through the insulating film ( 139 ), and a second region in an internal side of the semiconductor substrate ( 101 ), and
wherein the first region is substantially perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 ), and the second region is non-perpendicular with respect to the exterior surface side of the semiconductor substrate ( 101 ).
14. The semiconductor device according to claim 13 , further comprising:
a protruding portion ( 146 ) being provided between the annular cylindrical insulating film ( 130 ) and the first region.
15. The semiconductor device according to claim 14 , wherein the protruding portion ( 146 ) is made from the same material that the semiconductor substrate ( 101 ) is made from.
16. The semiconductor device according to claim 13 , wherein the through electrode ( 129 ) extends through the insulating film ( 139 ) via an opening ( 145 ) in the insulating film ( 139 ).
17. The semiconductor device according to claim 16 , wherein a diameter of the opening ( 145 ) is smaller than a maximum diameter of the through electrode ( 129 ).
18. The semiconductor device according to claim 13 , wherein an innermost portion ( 131 ) of said annular cylindrical insulating film ( 130 ) is annular and cylindrical and an outermost portion ( 135 ) is annular and cylindrical.