Magneto-resistance effect element including free layer having multilayer constitution including magnetic body mixed with element having 4F electrons
In an MR element constituted in such a manner that a pinned layer whose magnetization direction is fixed, a nonmagnetic spacer layer, and a free layer whose magnetization direction is changed according to an external magnetic field, are laminated in this order; the free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons at a certain ratio. Specifically, the first layer in contact with the spacer layer, the third layer, the fifth layer, and the seventh layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into CoFe. The second layer and the sixth layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into NiFe. The third layer of the free layer is Cu. A damping constant of the free layer is greater than 0.018.
1. A magneto-resistance effect element comprising:
a pinned layer whose magnetization direction is fixed;
a free layer whose magnetization direction is changed according to an external magnetic field; and
a nonmagnetic spacer layer provided between said pinned layer and said free layer,
wherein said free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons, and has a portion which is in contact with said spacer layer and which is made of a layer that includes CoFe and that includes an element having 4f electrons, and
wherein said magnetic body is a NiFe alloy including Nd and/or Sm as said element having 4f electrons, or a CoFe alloy including Nd and/or Sm as said element having 4f electrons.
2. A magneto-resistance effect element according to claim 1 , wherein a ratio of Ni in said NiFe alloy is set to greater than or equal to 70 at. % and less than 100 at. %, and a ratio of Co in said CoFe alloy is set to greater than 0 at. % and less than or equal to 70 at. %.
3. A magneto-resistance effect element according to claim 1 , wherein said element having 4f electrons is mixed into said magnetic body at a ratio greater than or equal to 2 at. % and less than or equal to 25 at. %.
4. A magneto-resistance effect element according to claim 1 , wherein a damping constant of said free layer is greater than 0.018.
5. A thin film magnetic head comprising the magneto-resistance effect element according to claim 1 .
6. A substrate comprising the thin film magnetic head according to claim 5 .
7. A wafer to be used for manufacturing the substrate according to claim 6 , comprising said thin film magnetic head.
8. A head gimbal assembly comprising:
a slider which includes the substrate according to claim 6 and which is arranged opposite a recording medium; and
a suspension to elastically support the slider.
9. A hard disk drive comprising:
a slider which includes the substrate according to claim 6 and which is arranged opposite a rotatably driven disc-shaped recording medium; and
a positioning device to support said slider and to position said slider with respect to said recording medium.