High temperature interfacial superconductivity
High-temperature superconductivity confined to nanometer-scale interfaces has been a long standing goal because of potential applications in electronic devices. The spontaneous formation of a superconducting interface in bilayers consisting of an insulator (La 2 CuO 4 ) and a metal (La 1−x Sr x CuO 4 ), neither of which is superconducting per se, is described. Depending upon the layering sequence of the bilayers, T c may be either ˜15 K or ˜30 K. This highly robust phenomenon is confined to within 2-3 nm around the interface. After exposing the bilayer to ozone, T c exceeds 50 K and this enhanced superconductivity is also shown to originate from a 1 to 2 unit cell thick interfacial layer. The results demonstrate that engineering artificial heterostructures provides a novel, unconventional way to fabricate stable, quasi two-dimensional high T c phases and to significantly enhance superconducting properties in other superconductors. The superconducting interface may be implemented, for example, in SIS tunnel junctions or a SuFET.
1. A superconducting interfacial layer formed by charge depletion and accumulation across an interface between non-superconducting materials with differing chemical potentials in which the interface is superconducting,
wherein the superconducting interface is formed between two cuprate layers, one of which behaves as an electrical insulator and the other as an electrical conductor.
2. The superconducting interface of claim 1 wherein the superconducting interfacial layer thickness is ≦2 UCs.
3. The superconducting interface of claim 2 wherein the interface is atomically abrupt.
4. The superconducting interface of claim 3 wherein T c >30 K.
5. The superconducting interface of claim 4 wherein the metal and insulator are cuprates.
6. The superconducting interface of claim 5 wherein the metal is overdoped La 2-x ,Sr x CuO 4 .
7. The superconducting interface of claim 6 wherein the overdoped La 2-x ,Sr x CuO 4 is a thin film.
8. The superconducting interface of claim 7 wherein the film thickness is ≦5 UCs.
9. The superconducting interface of claim 7 wherein x>0.25.
10. The superconducting interface of claim 5 wherein the insulator is underdoped La 2-x ,Sr x CuO 4 or La 2 CuO 4 .
11. The superconducting interface of claim 10 wherein the underdoped La 2-x ,Sr x CuO 4 or La 2 CuO 4 is a thin film.
12. The superconducting interface of claim 11 wherein the film thickness is ≦5 UCs.
13. The superconducting interface of claim 11 wherein x<0.06.
14. The superconducting interface of claim 1 wherein the metal and insulator are thin films sequentially formed on a substrate.
15. The superconducting interface of claim 14 wherein the insulator is formed on top of the metal.
16. The superconducting interface of claim 14 wherein the metal is formed on top of the insulator.
17. The superconducting interface of claim 14 wherein the substrate comprises LaSrAlO 4 , SrTiO 3 , or (La 0.29 , Sr 0.71 )(Al 0.65 ,Ta 0.35 )O 3 .
18. A superconducting interfacial layer formed by charge depletion and accumulation across an interface between non-superconducting materials with differing chemical potentials in which the interface is superconducting,
wherein the superconducting interface is formed between a metal and an insulator, and wherein the metal is La 2-x ,Sr x CuO 4 with x>0.25 and the insulator is La 2-x ,Sr x CuO 4 with x<0.06 or La 2 CuO 4 .
19. A layered structure comprising a plurality of the superconducting interfaces according to claim 1 .
20. A layered structure comprising a plurality of superconducting interfaces formed between at least two cuprate layers, at least one behaving as an electrical conductor and at least one behaving as a superconductor.
21. A superconducting interfacial layer formed by charge depletion and accumulation across an interface between non-superconducting materials with differing chemical potentials in which the interface is superconducting,
wherein the superconducting interface is formed between a metal and an insulator, and wherein the superconductor layer is La 2-x ,Sr x CuO 4 or La 2 CuO 4+δ .
22. The layered structure of claim 20 , or 21 wherein T c >50 K.
23. The layered structure of claim 21 wherein 0.06≦x≦0.25.
24. The layered structure of claim 21 wherein the layer thicknesses is >2 UC.
25. The layered structure of claim 21 wherein the interfaces are atomically abrupt.
26. An electronic device comprising a superconducting interface which is formed according to claim 1 , 19 , or 20 .
27. The electronic device of claim 26 wherein the electronic device is a two-terminal electronic device.
28. The electronic device of claim 27 wherein the two-terminal electronic device comprises a Josephson junction.
29. The electronic device of claim 26 wherein the electronic device is a three-terminal electronic device.
30. The electronic device of claim 29 wherein the three-terminal electronic device comprises a SuFET.
31. The electronic device of claim 26 comprising said superconducting interface as interconnect wiring.
32. A method of forming a superconducting interface comprising: depositing a metal layer; and depositing an insulator layer onto the metal layer.
33. The method of claim 32 wherein the metal layer is deposited onto a substrate.
34. The method of claim 32 wherein the layers are deposited by ALL-MBE.
35. A method of forming a superconducting interface comprising:
depositing an insulator layer; and depositing a metal layer onto the insulator layer.
36. The method of claim 35 wherein the insulator layer is deposited onto a substrate.
37. The method of claim 35 wherein the layers are deposited by ALL-MBE.