Antireflective coating compositions
View Patent ↗The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.
1. A composition comprising a) a polymer having a ceiling temperature in the range from about 0° C. to about 70° C.; b) a crosslinker; and c) optionally, a cross-linking catalyst, further where the polymer is selected from,
(i) a polymer comprising repeating units
or
(ii) a polymer comprising repeating units
where R 1 , R 4 , and R 20 are each independently selected from hydrogen, halogen, unsubstituted C 1-4 alkyl and substituted C 1-4 alkyl; R 7 is a chromophore which absorbs at any actinic wavelength; R 10 is —(CH 2 ) j —OR 8 and R 8 is selected from hydrogen, an acid labile group, and a crosslinking site; R 22 is selected from unsubstituted C 1-4 alkyl, substituted C 1-4 alkyl, unsubstituted alkoxycarbonyl, substituted alkoxycarbonyl, and crosslinking site; R 25 is selected from unsubstituted C 1-4 alkyl, substituted C 1-4 alkyl, C 1-4 unsubstituted alkoxy, C 1-4 substituted alkoxy, halogen, cyano, and nitro; i is 0 or 1; j is 0, 1, or 2; and z is 1 to 4.
2. The composition of claim 1 wherein the polymer comprises repeating units
where R 20 is selected from hydrogen, halogen, unsubstituted C 1-4 alkyl and substituted C 1-4 alkyl; R 22 is selected from unsubstituted C 1-4 alkyl, substituted C 1-4 alkyl, unsubstituted alkoxycarbonyl, substituted alkoxycarbonyl, and crosslinking site; R 25 is selected from unsubstituted C 1-4 alkyl, substituted C 1-4 alkyl, C 1-4 unsubstituted alkoxy, C 1-4 substituted alkoxy, halogen, cyano, and nitro; and z is 1 to 4.
3. The composition of claim 1 wherein the polymer comprises repeating units
where R 1 and R 4 are each independently selected from hydrogen, halogen, unsubstituted C 1-4 alkyl and substituted C 1-4 alkyl; R 7 is a chromophore which absorbs at any actinic wavelength; R 10 is —(CH 2 ) j —OR 8 and R 8 is selected from hydrogen, an acid labile group, and a crosslinking site; and i is 0 or 1.
4. The composition of claim 1 wherein R 7 is selected from the group of unsubstituted fluorine, substituted fluorene, vinylenephenylene, anthracene, perylene, phenyl, benzyl, chalcone, phthalimide, pamoic acid, acridine, azo compounds, dibenzofuran, thiophenes, anthracene, naphthalene, benzene, chalcone, phthalimides, pamoic acid, acridine, azo compounds, chrysenes, pyrenes, fluoranthrenes, anthrones, benzophenones, thioxanthones, heterocyclic aromatic rings containing heteroatoms selected from oxygen, nitrogen, sulfur, and combinations thereof.
5. The composition of claim 1 wherein R 7 is unsubstituted or substituted phenyl.
6. The composition of claim 1 wherein for a), the polymer has a ceiling temperature in the range of from about 20° C. to about 65° C.
7. The composition of claim 2 wherein for a), the polymer is selected from
8. A method for forming a photoresist relief image comprising: applying on a substrate a layer the composition of claim 1 ; applying a layer of chemically-amplified photoresist composition above said composition of claim 1 .
9. The method of claim 8 wherein the photoresist composition is imaged with activating radiation and the imaged photoresist composition is treated with a developer to provide a photoresist relief image.
10. A coated substrate comprising: a substrate having thereon; a layer of the composition of claim 1 ; a layer of a chemically-amplified photoresist composition above said composition of claim 1 .