IP Library Granted Patent US 8,211,737
Granted Patent B2
US 8,211,737 · App. 12/553,401 · Granted Jul 3, 2012

Method of producing nanopatterned articles, and articles produced thereby

Assignees: The University of Massachusetts; The Regents of the University of California
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Quick Facts
Patent No.
US 8,211,737
App. No.
12/553,401
Granted
Jul 3, 2012
Kind
B2
Abstract

A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.

Claims (48)

1. A method of preparing a nanopatterned surface, comprising:

forming a block copolymer film on an annealed, miscut surface of a crystalline substrate;

annealing the block copolymer film; and

surface reconstructing the annealed block copolymer film.

2. The method of claim 1 , wherein the annealed block copolymer film comprises a hexagonal array of cylindrical microdomains.

3. The method of claim 2 , wherein the hexagonal array of cylindrical microdomains exhibits an orientation order of at least 0.9 over an area of at least 1 centimeter.

4. The method of claim 2 , wherein the cylindrical microdomains are separated by a nearest-neighbor distance of about 10 to about 100 nanometers.

5. The method of claim 1 , wherein the annealed block copolymer film comprises a linear array of micro domains.

6. The method of claim 1 , wherein the block copolymer comprises a first block having a first Hildebrand solubility parameter and a second block having a second Hildebrand solubility parameter, and wherein the first Hildebrand solubility parameter and the second Hildebrand solubility parameter differ by at least 0.4 megapascal 1/2 .

7. The method of claim 6 , wherein the first block and the second block differ in number average molecular weight by at least a factor of 1.5.

8. The method of claim 1 , wherein the block copolymer is a polystyrene-poly(4-vinylpyridine) or polystyrene-poly(2-vinylpyridine) diblock copolymer.

9. The method of claim 1 , wherein the block copolymer is a polystyrene-poly(ethylene oxide) diblock copolymer.

10. The method of claim 1 , wherein the block copolymer film has a thickness of about 10 to about 100 nanometers.

11. The method of claim 1 , wherein the crystalline substrate consists essentially of a single crystal.

12. The method of claim 1 , wherein the crystalline substrate is selected from the group consisting of crystalline silicon, doped crystalline silicon, and crystalline aluminum oxide.

13. The method of claim 1 , wherein the crystalline substrate comprises crystalline silicon.

14. The method of claim 1 , wherein the crystalline substrate comprises crystalline aluminum oxide.

15. The method of claim 1 , wherein the miscut crystalline surface is at least one degree removed from any crystallographic plane of the crystalline substrate.

16. The method of claim 1 , wherein the annealed, miscut surface of the crystalline substrate exhibits a saw-tooth pattern characterized by a peak-to-peak separation of about 24 to about 200 nanometers and a peak-to-valley separation of about 3 to about 20 nanometers.

17. The method of claim 1 , wherein the annealed, miscut surface of the crystalline substrate exhibits a grooved pattern characterized by a groove depth of about 3 to about 20 nanometers and a groove-to-groove separation of about 24 to about 200 nanometers.

18. The method of claim 1 , wherein the annealed, miscut surface of the crystalline substrate is chemically homogeneous.

19. The method of claim 1 , wherein the block copolymer is a polystyrene-poly(4-vinylpyridine) diblock copolymer, and wherein the surface reconstructing the annealed block copolymer film comprises immersing the block copolymer film in a lower alkanol solvent selected from the group consisting of methanol, ethanol, and mixtures thereof.

20. The method of claim 1 , further comprising coating an etch-resistant layer on the surface reconstructed block copolymer film to form a resist-coated block copolymer film.

21. The method of claim 20 , wherein the coating the etch-resistant layer on the surface reconstructed block copolymer film comprises depositing gold onto the surface reconstructed block copolymer film.

22. The method of claim 20 , further comprising etching through the resist-coated block copolymer film and into the substrate to create an etched article comprising a nanopatterned substrate.

23. The method of claim 22 , further comprising separating the etch-resistant layer and the block copolymer film from the nanopatterned substrate.

24. The method of claim 1 ,

wherein the surface-reconstructed block copolymer film defines a hexagonal array of cylindrical voids extending through the surface-reconstructed block copolymer film; and

wherein the method further comprises coating a magnetic material on the surface reconstructed block copolymer film and into the voids defined by the surface reconstructed block copolymer film.

25. The method of claim 24 , wherein the magnetic material is selected from the group consisting of nickel, cobalt, chromium, and alloys of iron and platinum.

26. The method of claim 24 , further comprising separating the magnetic material-coated, reconstructed block copolymer film from the crystalline substrate to form a miscut surface decorated with a hexagonal array of magnetic islands.

27. The method of claim 1 ,

wherein the crystalline substrate consists essentially of a single crystal of crystalline aluminum oxide or doped silicon;

wherein the block copolymer film comprises a polystyrene-block-poly(4-vinylpyridine) diblock copolymer comprising a polystyrene block having a number average molecular weight of about 6,000 to about 30,000 atomic mass units and a poly(4-vinylpyridine) or poly(2-vinylpyridine) block having a number average molecular weight of about 2,000 to about 10,000 atomic mass units;

wherein a ratio of the number average molecular weight of the polystyrene block to the number average molecular weight of the poly(4-vinylpyridine) or poly(2-vinylpyridine) block is about 2 to about 6;

wherein the annealing the block copolymer film comprises exposing the block copolymer film to an annealing solvent vapor comprising toluene and tetrahydrofuran;

wherein the annealed block copolymer film comprises a hexagonal array of cylindrical poly(4-vinylpyridine) or poly(2-vinylpyridine) microdomains;

wherein the hexagonal array of cylindrical microdomains exhibits an orientation order of at least 0.9 over an area of at least 1 centimeter 2 ; and

wherein the surface reconstructing the annealed block copolymer film comprises immersing the annealed block copolymer film in a solvent comprising a C 1 -C 3 alkanol.

28. The method of claim 1 ,

wherein the crystalline substrate consists essentially of a single crystal of crystalline aluminum oxide or doped silicon;

wherein the block copolymer film comprises a polystyrene-block-poly(ethylene oxide) diblock copolymer comprising a polystyrene block having a number average molecular weight of about 6,000 to about 30,000 atomic mass units and a poly(ethylene oxide) block having a number average molecular weight of about 2,000 to about 10,000 atomic mass units;

wherein a ratio of the number average molecular weight of the polystyrene block to the number average molecular weight of the poly(ethylene oxide) block is about 2 to about 6;

wherein the annealing the block copolymer film comprises exposing the block copolymer film to an annealing solvent vapor comprising toluene and tetrahydrofuran;

wherein the annealed block copolymer film comprises a hexagonal array of cylindrical poly(ethylene oxide) microdomains;

wherein the hexagonal array of cylindrical microdomains exhibits an orientation order of at least 0.9 over an area of at least 1 centimeter; and

wherein the surface reconstructing the annealed block copolymer film comprises immersing the annealed block copolymer film in a solvent comprising a C 1 -C 3 alkanol.

29. The method of claim 1 , wherein the surface reconstructing the annealed block copolymer film comprises exposing the annealed block copolymer film to a solvent that preferentially dissolves a minor phase of the block copolymer film and effects transfer of the minor phase to a surface of the block copolymer film opposite the substrate.

Assignments (5)
CONFIRMATORY LICENSE Recorded Nov 30, 2012
From: MASSACHUSETTS, UNIVERSITY OF
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 029430/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNMENT FILED IN ERROR IN APPLICATION NUMBER 12533401 PREVIOUSLY RECORDED ON REEL 023756 FRAME 0511. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT APPLICATION NUMBER IS 12553401. THIS IS NOT OUR FIRM'S APPLICATION, NO NOR RECEIVED TO INCLUDE WITH THIS SUBMISSION. Recorded May 11, 2012
From: RUSSELL, THOMAS P.; PARK, SOOJIN
To: THE UNIVERSITY OF MASSACHUSETTS
Reel/Frame 028193/0081 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2010
From: RUSSELL, THOMAS P.; PARK, SOOJIN
To: THE UNIVERSITY OF MASSACHUSETTS
Reel/Frame 023756/0511 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2010
From: XU, TING
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 023756/0529 →
CONFIRMATORY LICENSE Recorded Dec 30, 2009
From: UNIVERSITY OF MASSACHUSETTS
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 023719/0555 →
Continuity (2)
Provisional Application 61098253 · Sep 19, 2008
Related Publication 20100112308A1 · May 6, 2010