II-VI core-shell semiconductor nanowires
A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.
1. A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells; further including dopants in the core or shell or both of the nanowires which modify the conductivity of the nanowires; and wherein the dopants are n-type and are selected from Al, In, Ga, Cl, Br or I.
2. The plurality of core-shell semiconductor nanowires of claim 1 wherein the dopants are p-type and are selected from N, P, As, Li, Cu, or LiN.
3. The plurality of core-shell semiconductor nanowires of claim 1 further including dopants in the core or shell or both of the nanowires which modify the spectral response of the nanowires.
4. The plurality of core-shell semiconductor nanowires of claim 3 wherein the dopants are selected from Mn or Cu.
5. The plurality of core-shell semiconductor nanowires of claim 1 wherein the nanowire cores and shells are made of different materials.
6. The plurality of core-shell semiconductor nanowires of claim 1 wherein each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.
7. The plurality of core-shell semiconductor nanowires of claim 6 wherein the metal alloy is gold-tin.
8. The plurality of core-shell semiconductor nanowires of claim 1 wherein the support withstands II-VI metal-organic vapor phase epitaxy growth temperatures.
9. The plurality of core-shell semiconductor nanowires of claim 8 wherein the support includes glasses, semiconductor substrates, metal foils, or high temperature plastics.
10. The plurality of core-shell semiconductor nanowires of claim 1 wherein the support includes a low energy surface film.
11. The plurality of core-shell semiconductor nanowires of claim 10 wherein the low energy surface film includes silicon oxide or aluminum oxide.
12. The plurality of core-shell semiconductor nanowires of claim 1 wherein II-VI materials form both the cores and shells and includes binary, ternary, and quaternary compositions.
13. The plurality of core-shell semiconductor nanowires of claim 1 wherein the diameter of each nanowire is less than 500 nanometers.
14. The plurality of core-shell semiconductor nanowires of claim 13 wherein the diameter of each nanowire is less than 100 nanometers.
15. The plurality of core-shell semiconductor nanowires of claim 1 wherein the length of each nanowire is greater than 500 nanometers.
16. The plurality of core-shell semiconductor nanowires of claim 15 wherein the length of each nanowire is greater than 2 microns.
17. The plurality of core-shell semiconductor nanowires of claim 1 wherein the shell includes a plurality of layers.
18. The plurality of core-shell semiconductor nanowires of claim 1 wherein the shell thickness ranges from 1 nanometer to hundreds of nanometers.
19. The plurality of core-shell semiconductor nanowires of claim 1 wherein the shell composition is either uniform or varies along its diameter.
20. The plurality of core-shell semiconductor nanowires of claim 1 wherein each core includes one or more discrete heterostructure units whose II-VI material composition is either uniform or varies over its length.
21. The plurality of core-shell semiconductor nanowires of claim 20 wherein the discrete heterostructure units have lengths which range from 1-10 nm to microns.