Antistatic gallium nitride based light emitting device and method for fabricating the same
View Patent ↗The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same. The method includes: growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer sequentially on a substrate; etching to remove parts of the layers above, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; etching to remove a part of the undoped GaN-based epitaxial layer; forming an ohmic contact electrode on an exposed part of p-type GaN-based epitaxial layer, and forming a Schottky contact electrode on another part; forming a p-electrode on a transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; forming an n-electrode on the exposed n-type GaN-based epitaxial layer; and forming a connecting conductor on an insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode. By forming a GaN Schottky diode directly on a p-type GaN-based epitaxial layer, the fabrication process is simplified while providing antistatic ability at the same time, and the emitting area is made the maximum use of so as to avoid the drop in the luminous efficiency of the GaN-based LED.
1. An antistatic Gallium Nitride, GaN, based light emitting device, comprising:
a substrate;
an n-type GaN-based epitaxial layer formed on the substrate, an active layer formed on the n-type GaN-based epitaxial layer, and a p-type GaN-based epitaxial layer formed on the active layer;
a GaN Schottky diode on a part of the p-type GaN-based epitaxial layer, the GaN Schottky diode comprising an undoped GaN-based epitaxial layer on said part of the p-type GaN-based epitaxial layer, an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer and a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer;
a transparent conducting layer on another part of the p-type GaN-based epitaxial layer;
an n-electrode on a part of the n-type GaN-based epitaxial layer;
a p-electrode on the transparent conducting layer and electrically connected with the ohmic contact electrode;
an insulation layer formed on side surfaces of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer; and
a connecting conductor on the insulation layer and another part of the n-type GaN-based epitaxial layer, and electrically connected with the Schottky contact electrode and the n-electrode.
2. The antistatic GaN-based light emitting device according to claim 1 , wherein: the ohmic contact electrode is made of Ti, or Al, or Cr, or any combination thereof.
3. The antistatic GaN-based light emitting device according to claim 1 , wherein: the Schottky contact electrode is made of Pt, or Au, or Ni, or any combination thereof.
4. The antistatic GaN-based light emitting device according to claim 1 , wherein: the insulation layer is made of silicon dioxide, silicon nitride, titanium oxide, aluminum oxide or polyimide.
5. The antistatic GaN-based light emitting device according to claim 1 , wherein: the connecting conductor is made of metal, metal alloy, metal oxide, or semiconductor having good conductivity, or any combination thereof.
6. A method for fabricating an antistatic Gallium Nitride, GaN, based light emitting device, comprising:
1) growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer on a substrate sequentially;
2) etching to remove parts of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area;
3) etching to remove the undoped GaN-based epitaxial layer on a part of the emitting area, to expose a part of the p-type GaN-based epitaxial layer;
4) forming an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer, and forming a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer;
5) forming a transparent conducting layer on the exposed p-type GaN-based epitaxial layer;
6) forming a p-electrode on the transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode;
7) forming an n-electrode on the exposed n-type GaN-based epitaxial layer;
8) forming an insulation layer on a sidewall surface of the emitting area; and
9) forming a connecting conductor on the insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode.
7. The method for fabricating an antistatic GaN-based light emitting device according to claim 6 , wherein: in step 3) the undoped GaN-based epitaxial layer is etched using wet chemical etching.