Methods of atomic layer deposition using titanium-based precursors

1. A method of forming a titanium-containing film by atomic layer deposition, the method comprising delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I:

wherein:

R is C 1 -C 6 -alkyl;

n is 1, 2, 3, 4 or 5;

L is C 1 -C 6 -alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C 1 -C 6 -alkyl.

2. The method of claim 1 , wherein

R is methyl, ethyl or propyl;

n is 1 or 2; and

L is selected from the group consisting of methoxy, ethoxy, propoxy, butoxy, dimethylamino, ethylmethylamino, and diethylamino.

3. The method of claim 1 , wherein

R is methyl or ethyl;

n is 1 or 2; and

L is selected from the group consisting of methoxy, ethoxy, propoxy, and butoxy.

4. The method of claim 1 , wherein

R is methyl or ethyl;

n is 1; and

L is selected from the group consisting of methoxy, ethoxy, propoxy and butoxy.

5. The method of claim 1 , wherein

R is methyl or ethyl;

n is 1 or 2; and

L is selected from the group consisting of dimethylamino, ethylmethylamino, and diethylamino.

6. The method of claim 1 , wherein the compound of Formula (I) is selected from the group consisting of:

(methylcyclopentadienyl)Ti(NMe 2 ) 3 ;

(ethylcyclopentadienyl)Ti(NMe 2 ) 3 ;

(propylcyclopentadienyl)Ti(NMe 2 ) 3 ;

(methylcyclopentadienyl)Ti(NEt 2 ) 3 ;

(ethylcyclopentadienyl)Ti(NEt 2 ) 3 ;

(propylcyclopentadienyl)Ti(NEt 2 ) 3 ;

(methylcyclopentadienyl)Ti(NMeEt) 3 ;

(ethylcyclopentadienyl)Ti(NMeEt) 3 ;

(propylcyclopentadienyl)Ti(NMeEt) 3 ;

(methylcyclopentadienyl)Ti(OMe) 3 ;

(ethylcyclopentadienyl)Ti(OMe) 3 ;

(propylcyclopentadienyl)Ti(OMe) 3 ;

(methylcyclopentadienyl)Ti(OEt) 3 ;

(ethylcyclopentadienyl)Ti(OEt) 3 ;

(propylcyclopentadienyl)Ti(OEt) 3 ;

(methylcyclopentadienyl)Ti(OiPr) 3 ;

(ethylcyclopentadienyl)Ti(OiPr) 3 ;

(propylcyclopentadienyl)Ti(OiPr) 3 ;

(methylcyclopentadienyl)Ti(OtBu) 3 ;

(ethylcyclopentadienyl)Ti(OtBu) 3 ; and

(propylcyclopentadienyl)Ti(OtBu) 3 .

7. The method of claim 1 , wherein the compound of Formula (I) is selected from the group consisting of:

(methylcyclopentadienyl)Ti(NMe 2 ) 3 ;

(methylcyclopentadienyl)Ti(OMe) 3 ;

(methylcyclopentadienyl)Ti(OiPr) 3 ; and

(methylcyclopentadienyl)Ti(OtBu) 3 .

8. The method of claim 1 , wherein the atomic layer deposition comprises photo-assisted atomic layer deposition.

9. The method of claim 1 , wherein the atomic layer deposition comprises liquid injection atomic layer deposition.

10. The method of claim 1 , wherein the at least one precursor is delivered to the substrate in pulses alternating with pulses of an oxygen source.

11. The method of claim 10 , wherein the oxygen source is selected from H 2 O, O 2 or ozone.

12. The method of claim 1 , further comprising delivering to the substrate at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, hydrazines, alkylhydrazines, boranes, silanes, ozone and a combination thereof.

13. The method of claim 1 , wherein at least two precursors corresponding in structure to Formula I are delivered to the substrate to form a titanium-containing film by atomic layer deposition.

14. The method of claim 1 , further comprising delivering to the substrate at least one non-titanium precursor to form a mixed metal film by atomic layer deposition.

15. The method of claim 14 , wherein the mixed metal film formed is selected from the group consisting of strontium titanate, barium titanate, hafnium titanate, zirconium titanate and lead zirconate titanate.

16. The method of claim 1 , wherein the titanium-containing film is used for a memory and/or logic application.