Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same
An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.
1. An electronic component comprising:
a substrate; and
a phase-separated layer supported on said substrate, wherein said phase-separated layer comprises:
a first phase comprising lanthanum manganate (LMO), and
a second phase selected from the group consisting of a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof, wherein:
MO=Al 2 O 3 , Ba x Nb y O z , Ba x Ta y O z , Ba x Sn y O z , Ba x Al y O z , ZnO, BiFeO 3 , BaTiO 3 , La x Ta y O z , La x Nb y O z , LaAlO 3 , and combinations thereof;
MN=TiN, ZrN, YN, VN, WN, GaN, AlN, HfN, TaN, NbN, InN, Si 3 N 4 , Zn 3 N 2 , and combinations thereof; and
Me=Pd, Ta, Zr, Ti, Ir, Hf, Pt, Au, Ni, Zn, Mg, Cu, Al, and combinations thereof.
2. The electronic component according to claim 1 , wherein the phase-separated layer is supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO.
3. The electronic component according to claim 1 , wherein said first phase is a continuous phase and said second phase is a discontinuous phase.
4. The electronic component according to claim 1 , wherein a weight ratio of said first phase to said second phase ranges from 1:99 to 99:1.
5. The electronic component according to claim 1 , wherein an upper surface of said phase-separated layer comprises interfaces between said first phase and said second phase.
6. The electronic component according to claim 5 , wherein a shape of said interfaces is selected from the group consisting of circular, rectangular, hexagonal and polyhedral.
7. The electronic component according to claim 1 , further comprising an electronically active layer supported on said phase-separated layer.
8. The electronic component according to claim 7 , wherein said electronically active layer is selected from the group consisting of a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, a electrical storage material, and a semiconductor material.
9. The electronic component according to claim 1 , wherein said second phase comprises a metal oxide (MO).
10. The electronic component according to claim 1 , wherein said second phase comprises a metal nitride (MN).
11. The electronic component according to claim 1 , wherein said second phase comprises a metal (Me).
12. The electronic component according to claim 1 , further comprising a biaxially-textured layer having a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO, wherein the phase-separated layer is deposited on said biaxially-textured layer.
13. The electronic component according to claim 12 , wherein said phase-separated layer is an epitaxial layer.
14. The electronic component according to claim 12 , wherein an upper surface of said phase-separated layer comprises interfaces between said first phase and said second phase.
15. The electronic component according to claim 12 , further comprising: a superconductor layer supported on said phase-separated layer.
16. A method of making an electronic component, said method comprising:
providing a substrate; and
forming a phase-separated layer supported on said substrate, wherein said phase-separated layer comprises:
a first phase comprising lanthanum manganate (LMO), and
a second phase selected from the group consisting of a metal oxide (MO), metal nitride (MN), a metal (Me) and combinations thereof, wherein:
MO=Al 2 O 3 , Ba x Nb y O z , Ba x Ta y O z , Ba x Sn y O z , Ba x Al y O z , ZnO, BiFeO 3 , BaTiO 3 , La x Ta y O z , La x Nb y O z , LaAlO 3 , and combinations thereof;
MN=TiN, ZrN, YN, VN, WN, GaN, AlN, HfN, TaN, NbN, InN, Si 3 N 4 , Zn 3 N 2 , and combinations thereof; and
Me=Pd, Ta, Zr, Ti, Ir, Hf, Pt, Au, Ni, Zn, Mg, Cu, Al, and combinations thereof.
17. The method according to claim 16 , wherein said forming step comprises providing:
a first material for forming said first phase, and a second material for forming said second phase; and
depositing said phase-separated layer by a technique selected from the group consisting of sputtering, pulsed laser deposition, e-beam evaporating, metal organic chemical vapor deposition, and metal organic deposition.
18. The method according to claim 16 , further comprising:
forming an electronically active layer supported on said phase-separated layer.
19. The method according to claim 16 , further comprising:
annealing said phase-separated layer.
20. The method according to claim 16 , further comprising:
forming a buffer layer supported on said substrate, said buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO,
wherein said phase-separated layer is supported on said buffer layer.