Interconnecting structure production method, and interconnecting structure
An interconnecting structure production method includes providing a substrate, forming a semiconductor layer on the substrate, forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant, forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein, forming an alloy layer on the oxide layer, and forming an interconnecting layer on the alloy layer.
1. An interconnecting structure production method, comprising:
providing a substrate;
forming a semiconductor layer on the substrate;
forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant;
forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein;
forming an alloy layer on the oxide layer, the alloy layer includes a Cu alloy layer comprising Cu and an additive element;
forming an interconnecting layer on the alloy layer; and
forming a diffusion barrier layer by heating the Cu alloy layer at a temperature of not less than 200° C. and not more than 300° C. to allow the additive element contained in the Cu alloy layer to be condensed.
2. The interconnecting structure production method according to claim 1 , wherein
the forming of the oxide layer includes bubbling the oxidizing gas through water to allow the oxidizing gas to contain water molecules.
3. The interconnecting structure production method according to claim 2 , wherein
the semiconductor layer includes an amorphous silicon layer,
the doped semiconductor layer includes a silicon layer containing the dopant, and
the forming of the oxide layer includes using an ozone gas as the oxidizing gas, heating the doped silicon layer in the ozone gas at a temperature of not less than 200° C. and not more than 300° C. to form a silicon oxide layer in the surface of the doped silicon layer.
4. The interconnecting structure production method according to claim 3 , wherein
the interconnecting layer includes a Cu layer.
5. The interconnecting structure production method according to claim 1 , wherein
the additive element comprises at least one metal element selected from the group consisting of Ni, Co, Mn, Zn, Mg, Al, Zr, Ti, Fe, and Ag.
6. The interconnecting structure production method according to claim 1 , wherein
the Cu alloy layer comprises Cu, and Ni or Mn with a concentration of not less than 1 at % and not more than 5 at % relative to the Cu.
7. The interconnecting structure production method according to claim 5 , wherein
the interconnecting layer includes the Cu layer comprising oxygen free copper with a purity of not less than 3 Nines.
8. The interconnecting structure production method according to claim 1 , wherein
the forming of the alloy layer includes sputtering a copper alloy sputtering target material comprising Cu and at least one metal element selected from the group consisting of Ni, Co, Mn, Zn, Mg, Al, Zr, Ti, Fe, and Ag as the additive element, or a copper alloy sputtering target material comprising Cu, and Ni or Mn with a concentration of not less than 1 at % and not more than 5 at % relative to the Cu, to form the alloy layer on the oxide layer, and
the forming of the interconnecting layer includes sputtering a copper sputtering target material comprising oxygen free copper with a purity of not less than 3 Nines to form the interconnecting layer on the alloy layer.