Microchannel plate devices with tunable resistive films

1. A microchannel plate comprising:

a) a substrate defining a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate;

b) a resistive layer comprising at least one of a nanoalloy and a nanolaminate structure formed over an outer surface of the plurality of channels, the at least one of the nanoalloy and the nanolaminate structure being chosen to have a composition that provides ohmic conduction with a predetermined resistivity that is substantially constant;

c) an emissive layer formed over the resistive layer;

d) a top electrode positioned on the top surface of the substrate; and

e) a bottom electrode positioned on the bottom surface of the substrate.

2. The microchannel plate of claim 1 wherein the substrate comprises a semiconductor substrate.

3. The microchannel plate of claim 1 wherein the substrate comprises an insulating substrate.

4. The microchannel plate of claim 1 wherein the nanolaminate structure comprises a combination of a metal oxide conducting layer and an insulating layer.

5. The microchannel plate of claim 4 wherein the metal oxide conducting layer comprises an oxide of at least one element selected from the group consisting of Zn, V, Mn, Ti, Sn, Ru, In, Cu, Ni, and Cd.

6. The microchannel plate of claim 4 wherein the insulating layer comprises at least one oxide of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

7. The microchannel plate of claim 4 wherein the insulating layer comprises at least one nitride of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

8. The microchannel plate of claim 1 wherein the resistive layer comprises a metal oxide layer, wherein a doping of the metal oxide layer determines the predetermined resistivity.

9. The microchannel plate of claim 4 wherein the metal oxide conducting layer comprises an alloy of a insulating oxide doped with at least one of element from the group consisting of Ru, Rh, Pd, Re, Os, Ir, Pt, and Au.

10. The microchannel plate of claim 1 wherein at least one of the predetermined resistivity and a profile of the predetermined resistivity is chosen to achieve a predetermined current output of the microchannel plate.

11. The microchannel plate of claim 1 wherein the emissive layer comprises an oxide of at least one element selected from of the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

12. The microchannel plate of claim 1 wherein the emissive layer comprises a nitride of at least one element selected of the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

13. The microchannel plate of claim 1 wherein the resistive layer and the emissive layer comprise a single layer.

14. The microchannel plate of claim 1 wherein at least one of a thickness and composition of the resistive layer is chosen to passivate the plurality of channels so that a number of ions released from the plurality of channels is reduced.

15. A microchannel plate comprising:

a) a plate of glass fibers defining a plurality of channels extending from a top surface of the plate of glass fibers to a bottom surface of the plate of glass fibers;

b) a resistive layer comprising at least one of a nanoalloy and a nanolaminate structure formed over an outer surface of the plurality of channels, the at least one of the nanoalloy and the nanolaminate structure being chosen to have a composition that provides ohmic conduction with a predetermined resistivity that is substantially constant;

c) an emissive layer formed over the resistive layer;

d) a top electrode positioned on the top surface of the substrate; and

e) a bottom electrode positioned on the bottom surface of the substrate.

16. The microchannel plate of claim 15 wherein the nanolaminate structure comprises a combination of a metal oxide conducting layer and an insulating layer.

17. The microchannel plate of claim 16 wherein the metal oxide conducting layer comprises an oxide of at least one element selected from the group consisting of Zn, V, Mn, Ti, Sn, Ru, In, Cu, Ni, and Cd.

18. The microchannel plate of claim 16 wherein the insulating layer comprises an oxide of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

19. The microchannel plate of claim 16 wherein the insulating layer comprises an nitride of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

20. The microchannel plate of claim 15 wherein the resistive layer comprises a metal oxide layer, wherein a doping of the metal oxide layer determines the predetermined resistivity.

21. The microchannel plate of claim 15 wherein the conducting layer comprises an alloy of a insulating oxide doped with at least one element selected from the group consisting of Ru, Rh, Pd, Re, Os, Ir, Pt, and Au.

22. The microchannel plate of claim 15 wherein the predetermined resistivity is chosen to achieve a predetermined current output of the microchannel plate.

23. The microchannel plate of claim 15 wherein the emissive layer comprises at least one layer of an oxide of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

24. The microchannel plate of claim 15 wherein the emissive layer comprises at least one layer of a nitride of at least one element selected from the group consisting of Al, Si, Mg, Sn, Ba, Ca, Sr, Sc, Y, La, Zr, Hf, Ta, Ti, V, Cs, B, Nb, Be, and Cr.

25. The microchannel plate of claim 15 wherein at least one of a thickness and composition of the resistive layer is chosen to passivate the plurality of channels so that a number of ions released from the plurality of channels is reduced.