Semiconductor package and camera module

1. A semiconductor package comprising:

a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface;

a solid-state imaging element formed on the first main surface of the semiconductor substrate;

an electrode pad formed on the first main surface of the semiconductor substrate;

a light-transmitting substrate placed on a patterned adhesive to form a hollow on the solid-state imaging element,

wherein the semiconductor substrate further includes a third surface located opposite to the first main surface below the patterned adhesive, the third surface being parallel to the first and second main surfaces and a distance between the first main surface and the second main surface of the semiconductor substrate is greater than a distance between the first main surface and the third surface of the semiconductor substrate; and

a through-hole electrode formed to extend through a portion of the semiconductor substrate located between the first main surface and the third surface below the electrode pad.

2. The package according to claim 1 , wherein the through-hole electrode is formed in the semiconductor substrate below the adhesive, and the distance between the first main surface and the second main surface of the semiconductor substrate that are located under the hollow is greater than a distance between the first main surface and the third surface of the semiconductor substrate.

3. The package according to claim 1 , wherein the through-hole electrode includes an insulating film formed on an inner surface of a through hole formed from the third surface to the first main surface, and a conductive film formed on the insulating film.

4. The package according to claim 3 , wherein the insulating film and the conductive film are formed on the third surface, and an external terminal is formed on the conductive film on the third surface.

5. The package according to claim 1 , wherein a reinforcing resin member is formed on the second main surface of the semiconductor substrate below the hollow.

6. The package according to claim 1 , wherein a curved shape is formed at a transition from the second main surface of the semiconductor substrate below the hollow to the third surface of the semiconductor substrate below the adhesive.

7. The package according to claim 1 , further comprising:

a color filter formed opposite to the solid-state imaging element; and

a microlens formed on the color filter to be opposed to the solid-state imaging element.

8. A semiconductor package comprising:

a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface;

a solid-state imaging element formed on the first main surface of the semiconductor substrate;

an electrode pad formed on the first main surface of the semiconductor substrate;

a through-hole electrode formed to extend through a portion of the semiconductor substrate which is located between the first main surface and second main surface, and which is located under the electrode pad, the through-hole electrode having a side surface in the semiconductor substrate located between the first main surface and the second main surface; and

a light-transmitting substrate placed on a patterned adhesive to form a hollow on the solid-state imaging element,

wherein a portion of the second main surface of the semiconductor substrate that does not include the side surface, that is parallel to the first main surface, and that is located adjacent to the through hole electrode and under the adhesive is recessed more with respect to a portion of the second main surface of the semiconductor substrate that is located under the hollow.

9. The package according to claim 8 , wherein the through-hole electrode is formed in the semiconductor substrate below the adhesive, and a distance between the portions of the first main surface and the second main surface of the semiconductor substrate that are located under the hollow is greater than a distance between portions of the first main surface and second main surface of the semiconductor substrate that are located close to the through-hole electrode.

10. The package according to claim 8 , wherein the through-hole electrode includes an insulating film formed on an inner surface of a through hole formed from the second main surface to the first main surface, and a conductive film formed on the insulating film.

11. The package according to claim 10 , wherein the insulating film and the conductive film are formed on the second main surface, and an external terminal is formed on the conductive film on the second main surface.

12. The package according to claim 8 , wherein a reinforcing resin member is formed on the second main surface of the semiconductor substrate below the hollow.

13. The package according to claim 8 , wherein a curved shape is formed between the second main surface of the semiconductor substrate below the hollow and that of the semiconductor substrate below the adhesive.

14. The package according to claim 8 , further comprising:

a color filter formed opposite to the solid-state imaging element; and

a microlens formed on the color filter to be opposed to the solid-state imaging element.

15. A camera module comprising:

a semiconductor package cited in claim 1 ;

an infrared cut filter formed on the light-transmitting substrate of the semiconductor package; and

an imaging lens formed on the infrared cut filter.