Light emitting devices including semiconductor nanocrystals
A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
1. A light emitting device comprising:
a first charge transporting layer including a first inorganic material in contact with a first electrode arranged to introduce charge in the first charge transporting layer;
a second electrode;
a plurality of colloidally-grown semiconductor nanocrystals disposed between the first electrode and the second electrode; and
a lightly doped layer proximal to the nanocrystals, wherein the lightly doped layer is doped in an amount effective to minimize non-radiative losses due to exciton quenching by unbound charge carriers in the transporting layer.
2. The light emitting device of claim 1 , further comprising a second charge transporting layer in contact with the second electrode, wherein the second electrode is arranged to introduce charge in the second charge transporting layer.
3. The light emitting device of claim 1 , wherein the first inorganic material is amorphous or polycrystalline.
4. The light emitting device of claim 1 , wherein the first inorganic material is an inorganic semiconductor.
5. The light emitting device of claim 4 , wherein the inorganic semiconductor includes a metal chalcogenide.
6. The light emitting device of claim 5 , wherein the metal chalcogenide is a mixed metal chalcogenide.
7. The light emitting device of claim 5 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
8. The light emitting device of claim 1 , wherein the second charge transporting layer includes a second inorganic material.
9. The light emitting device of claim 8 , wherein the second inorganic material is amorphous or polycrystalline.
10. The light emitting device of claim 8 , wherein the second inorganic material is an inorganic semiconductor.
11. The light emitting device of claim 10 , wherein the inorganic semiconductor includes a metal chalcogenide.
12. The light emitting device of claim 11 , wherein the metal chalcogenide is a mixed metal chalcogenide.
13. The light emitting device of claim 11 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
14. The light emitting device of claim 1 , wherein the first charge transporting layer is a hole transporting layer.
15. The light emitting device of claim 1 , wherein the first charge transporting layer is an electron transporting layer.
16. The light emitting device of claim 1 , wherein the plurality of semiconductor nanocrystals form a monolayer.
17. The light emitting device of claim 1 , wherein the plurality of semiconductor nanocrystals is a substantially monodisperse population of semiconductor nanocrystals.
18. The light emitting device of claim 1 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern.
19. The light-emitting device of claim 18 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern by microcontact printing.
20. The light emitting device of claim 1 , wherein the device is transparent.
21. A method of generating light comprising:
providing a device including a first electrode, a second electrode, a first charge transporting layer including a first inorganic material in contact with the first electrode, and a plurality of colloidally-grown semiconductor nanocrystals disposed between the first electrode and the second electrode, and a lightly doped layer a lightly doped layer proximal to the nanocrystals, wherein the lightly doped layer is doped in an amount effective to minimize non-radiative losses due to exciton quenching by unbound charge carriers in the transporting layer; and
applying a light-generating potential across the first electrode and the second electrode.
22. The method of claim 21 , wherein the first inorganic material is amorphous or polycrystalline.
23. The method of claim 22 , wherein the first inorganic material is an inorganic semiconductor.
24. The method of claim 23 , wherein the inorganic semiconductor includes a metal chalcogenide.
25. The method of claim 24 , wherein the metal chalcogenide is a mixed metal chalcogenide.
26. The method of claim 24 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
27. The method of claim 21 , wherein the device further includes a second charge transporting layer including a second inorganic material.
28. The method of claim 27 , wherein the second inorganic material is amorphous or polycrystalline.
29. The method of claim 28 , wherein the second inorganic material is an inorganic semiconductor.
30. The method of claim 29 , wherein the inorganic semiconductor includes a metal chalcogenide.
31. The method of claim 30 , wherein the metal chalcogenide is a mixed metal chalcogenide.
32. The method of claim 30 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
33. The method of claim 21 , wherein the plurality of semiconductor nanocrystals form a monolayer.
34. The method of claim 21 , wherein the plurality of semiconductor nanocrystals is a substantially monodisperse population of semiconductor nanocrystals.
35. The method of claim 21 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern.
36. The method of claim 35 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern by microcontact printing.
37. The method of claim 21 , wherein the device is transparent.
38. A display including a plurality of light emitting devices,
wherein at least one light emitting device comprises:
a first charge transporting layer including a first inorganic material in contact with a first electrode arranged to introduce charge in the first charge transporting layer;
a second electrode;
a plurality of colloidally-grown semiconductor nanocrystals disposed between the first electrode and the second electrode; and
a lightly doped layer a lightly doped layer proximal to the nanocrystals, wherein the lightly doped layer is doped in an amount effective to minimize non-radiative losses due to exciton quenching by unbound charge carriers in the transporting layer.
39. The display of claim 38 , further comprising a second charge transporting layer in contact with the second electrode, wherein the second electrode is arranged to introduce charge in the second charge transporting layer.
40. The display of claim 38 , wherein the first inorganic material is amorphous or polycrystalline.
41. The display of claim 38 , wherein the first inorganic material is an inorganic semiconductor.
42. The display of claim 41 , wherein the inorganic semiconductor includes a metal chalcogenide.
43. The display of claim 42 , wherein the metal chalcogenide is a mixed metal chalcogenide.
44. The display of claim 42 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
45. The display of claim 38 , wherein the second charge transporting layer includes a second inorganic material.
46. The display of claim 45 , wherein the second inorganic material is amorphous or polycrystalline.
47. The display of claim 45 , wherein the second inorganic material is an inorganic semiconductor.
48. The display of claim 47 , wherein the inorganic semiconductor includes a metal chalcogenide.
49. The display of claim 48 , wherein the metal chalcogenide is a mixed metal chalcogenide.
50. The display of claim 48 , wherein the metal chalcogenide includes a zinc oxide, a titanium oxide, a niobium oxide, a zinc sulfide, an indium tin oxide, or a mixture thereof.
51. The display of claim 38 , wherein the first charge transporting layer is a hole transporting layer.
52. The display of claim 38 , wherein the first charge transporting layer is an electron transporting layer.
53. The display of claim 38 , wherein the plurality of semiconductor nanocrystals form a monolayer.
54. The display of claim 38 , wherein the plurality of semiconductor nanocrystals is a substantially monodisperse population of semiconductor nanocrystals.
55. The display of claim 38 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern.
56. The display of claim 55 , wherein the plurality of semiconductor nanocrystals is arranged in a pattern by microcontact printing.
57. The display of claim 38 , wherein the device is transparent.