Anode for an organic electronic device
There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting.
1. An anode for an organic electronic device comprising a conducting inorganic oxide material, selected from either indium-tin-oxide, indium-zinc-oxide, aluminum-tin-oxide, aluminum-zinc-oxide, and zirconium-tin-oxide or combinations thereof, having an oxidized surface layer which is non-conductive and hole-transporting.
2. The anode of claim 1 , wherein the surface layer is a plasma-oxidized layer.
3. The anode of claim 1 , wherein the conducting inorganic oxide material is selected from the group consisting of indium-tin-oxide, indium-zinc-oxide, aluminum-tin-oxide, aluminum-zinc-oxide, and zirconium-tin-oxide.
4. An organic electronic device comprising:
a substrate,
an anode comprising a conducting inorganic oxide material, selected from either indium-tin-oxide, indium-zinc-oxide, aluminum-tin-oxide, aluminum-zinc-oxide, and zirconium-tin-oxide or combinations thereof, having an oxidized surface layer which is non-conductive and hole-transporting
at least one organic active layer, and
a cathode.
5. The device of claim 4 , wherein the surface layer is a plasma-oxidized layer.
6. The device of claim 4 , wherein the substrate is a TFT substrate having an inorganic surface.
7. The device of claim 6 , wherein the inorganic surface layer is a passivation layer having a thickness 50 to 500 nm.