Oxide semiconductor and thin film transistor including the same
An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT.
1. An oxide semiconductor obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO), wherein a composition ratio of Hf with respect to a total content of gallium (Ga), indium (In), zinc (Zn), and Hf is 0 at %<Hf(at %)≦10 at %.
2. The oxide semiconductor of claim 1 , wherein a composition ratio of Hf with respect to a total content of Ga, In, Zn, and Hf is 0 at %<Hf(at %)≦6.45 at %.
3. The oxide semiconductor of claim 1 , wherein a composition ratio of Hf with respect to a total content of Ga, In, Zn, and Hf is 2.68 at %≦Hf(at %)≦5.16 at %.
4. The oxide semiconductor of claim 2 , wherein a composition ratio of Ga with respect to a total content of Ga, In, Zn, and Hf is 39.4 at %≦Ga(at %)<42.4 at %.
5. The oxide semiconductor of claim 2 , wherein a composition ratio of In with respect to a total content of Ga, In, Zn, and Hf is 42.2 at %≦In(at %)<43.7 at %.
6. The oxide semiconductor of claim 2 , wherein a composition ratio of Zn with respect to a total content of Ga, In, Zn, and Hf is 12.0 at %≦Zn (at %)<13.9 at %.
7. The oxide semiconductor of claim 1 , further comprising a Group I element, a Group II element, a Group III element, a Group IV element, a Group V element, or a lanthanoid (Ln)-based element.
8. The oxide semiconductor of claim 1 , wherein the oxide semiconductor is amorphous.
9. The oxide semiconductor of claim 1 , wherein the oxide semiconductor is partially crystalline.
10. The oxide semiconductor of claim 1 , wherein the oxide semiconductor is crystalline.
11. An oxide thin film transistor (TFT) comprising:
a gate;
a channel which is formed so as to correspond to the gate and comprises an oxide semiconductor obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO), wherein a composition ratio of Hf with respect to a total content of gallium (Ga), indium (In), zinc (Zn), and Hf is 0 at %<Hf(at %)≦10 at %;
a gate insulating layer which is formed between the gate and the channel; and
a source and a drain which are formed so as to contact both sides of the channel, respectively.
12. The oxide TFT of claim 11 , wherein a composition ratio of Hf with respect to a total content of Ga, In, Zn, and Hf in the oxide semiconductor is 0at %<Hf(at %)≦6.45 at %.
13. The oxide TFT of claim 11 , wherein a composition ratio of Hf with respect to a total content of Ga, In, Zn, and Hf in the oxide semiconductor is 2.68 at %≦Hf(at %)≦5.16 at %.
14. The oxide TFT of claim 12 , wherein a composition ratio of Ga with respect to a total content of Ga, In, Zn, and Hf is 39.4 at %≦Ga(at %)<42.4 at %.
15. The oxide TFT of claim 12 , wherein a composition ratio of In with respect to a total content of Ga, In, Zn, and Hf is 42.2 at %≦In (at %)<43.7 at %.
16. The oxide TFT of claim 12 , wherein a composition ratio of Zn with respect to a total content of Ga, In, Zn, and Hf is 12.0 at %≦Zn (at %)<13.9 at %.
17. The oxide TFT of claim 11 , wherein the channel further comprises a Group I element, a Group II element, a Group III element, a Group IV element, a Group V element, or a lanthanoid (Ln)-based element.
18. The oxide TFT of claim 11 , wherein the oxide semiconductor is amorphous.
19. The oxide TFT of claim 11 , wherein the oxide semiconductor is partially crystalline.
20. The oxide TFT of claim 11 , wherein the oxide semiconductor is crystalline.