Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy
Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.
1. An image sensor, comprising:
at least one pixel transistor disposed in or on a silicon substrate, wherein the pixel transistor includes a first gate electrode and a first dielectric layer that is disposed between the first gate electrode and the silicon substrate, wherein the first dielectric layer is disposed on a first portion of the silicon substrate that is of a first conductivity type; and
at least one peripheral transistor disposed in or on the silicon substrate, wherein the peripheral transistor includes a second gate electrode and a second dielectric layer that is disposed between the second gate electrode and the silicon substrate, wherein the second dielectric layer is disposed on a second portion of the silicon substrate that is of the first conductivity type, the pixel transistor having a lightly-doped drain (LDD) area disposed adjoining the first dielectric layer, wherein the LDD area comprises doped epitaxial silicon of a second conductivity type, and wherein the at least one peripheral transistor does not include an LDD area of doped epitaxial silicon.
2. The apparatus of claim 1 , wherein the doped epitaxial silicon is disposed in a recess in the silicon substrate.
3. The apparatus of claim 2 , wherein the at least one pixel transistor comprises a transistor selected from at least one of a source follower, a reset transistor, a row select transistor, and a transfer transistor.
4. The apparatus of claim 2 , wherein the doped epitaxial silicon comprises n-doped silicon.
5. The apparatus of claim 2 , wherein the doped epitaxial silicon comprises p-doped silicon.
6. The apparatus of claim 1 , wherein the doped epitaxial silicon is disposed on a surface of the silicon substrate and dopant in the doped silicon is diffused into the silicon substrate.
7. The apparatus of claim 6 , wherein the at least one pixel transistor comprises a transistor selected from at least one of a source follower, a reset transistor, a row select transistor, and a transfer transistor.
8. The apparatus of claim 6 , wherein the doped epitaxial silicon comprises n-doped silicon.
9. The apparatus of claim 6 , wherein the doped epitaxial silicon comprises p-doped silicon.
10. The apparatus of claim 1 , further comprising a photosensitive element disposed in a silicon substrate to convert light into an electrical signal, wherein the at least one pixel transistor is disposed adjacent to the photosensitive element, and wherein the doped epitaxial silicon of the LDD area is to reduce an isolation distance between the photosensitive element and the at least one pixel transistor.
11. The apparatus of claim 1 , wherein the doped epitaxial silicon of the LDD area is unstressed doped epitaxial silicon.