Chemical mechanical polishing method

1. A method of polishing a substrate, comprising:

providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

providing a shape memory chemical mechanical polishing pad having a pad thickness, PT; wherein the polishing pad comprises a polishing layer set in a densified state, wherein the polishing layer comprises a shape memory matrix material having an original shape and a programmed shape; wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in its original shape; wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is set in the programmed shape; wherein the DT is <80% of the OT;

creating dynamic contact between a polishing surface of the polishing layer and the substrate to polish a surface of the substrate;

monitoring at least one polishing pad property selected from a polishing pad thickness and at least one groove depth; and,

exposing at least a portion of the polishing layer proximate the polishing surface to an activating stimulus;

wherein the portion of the polishing layer proximate the polishing surface exposed to the activating stimulus transitions from the densified state to a recovered state.

2. The method of claim 1 , further comprising:

conditioning the polishing surface of the polishing layer, wherein the conditioning is abrasive conditioning.

3. The method of claim 1 , further comprising:

providing a controller;

providing a measuring device capable of monitoring the at least one polishing pad property;

providing a source capable of creating the activating stimulus;

wherein the at least one polishing pad property for at least a portion of the polishing pad is decreased following the dynamic contact with the substrate; wherein the measuring device and the source communicate with the controller; wherein the measuring device inputs information to the controller regarding the at least one polishing pad property; and wherein the controller controls the source based on the information input from the measuring device, facilitating the selective exposure of at least a portion of the polishing pad to the activating stimulus, such that the at least one polishing pad property is increased.

4. The method of claim 1 , wherein the activating stimulus is selected from exposure to heat, light, a magnetic field, an electric field, water, pH, and combinations thereof.

5. A method of polishing a substrate, comprising:

providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

providing a shape memory chemical mechanical polishing pad having a pad thickness, PT; wherein the polishing pad comprises a polishing layer set in a densified state, wherein the polishing layer comprises a shape memory matrix material having an original shape and a programmed shape; wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in its original shape; wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is set in the programmed shape; wherein the DT is <80% of the OT;

providing a controller;

providing a measuring device capable of monitoring at least one polishing pad property selected from a polishing pad thickness and at least one groove depth;

providing a source capable of creating an activating stimulus;

creating dynamic contact between a polishing surface of the polishing layer and the substrate to polish a surface of the substrate;

monitoring the at least one polishing pad property; and,

exposing at least a portion of the polishing layer proximate the polishing surface to the activating stimulus;

wherein the at least one polishing pad property for at least a portion of the polishing pad is decreased following the dynamic contact with the substrate; wherein the measuring device and the source communicate with the controller; wherein the measuring device inputs information to the controller regarding the at least one polishing pad property; and wherein the controller controls the source based on the information-input from the measuring device, facilitating a selective exposure of the at least a portion of the polishing pad to the activating stimulus, such that the at least one polishing pad property is increased.

6. The method of claim 5 , further comprising:

conditioning of the polishing surface, wherein the conditioning is abrasive conditioning.

7. The method of claim 1 , wherein the polishing pad property is maintained within ±5% of its initial value over multiple polishing operations.

8. The method of claim 1 , further comprising:

providing a polishing medium at an interface between the polishing surface and the surface of the substrate.

9. The method of claim 1 , wherein the substrate comprises a series of patterned semiconductor wafers.

10. The method of claim 1 , wherein the shape memory matrix material has a glass transition temperature, T g , measured by differential scanning calorimetry; wherein the portion of the polishing layer exposed to the activating stimulus exhibits a temperature of ≧the T g temperature for the shape memory matrix material.