Method of forming resist pattern
A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.
1. A method of forming a resist pattern, comprising:
applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of said first resist film, performing a post exposure bake treatment, and then performing developing to form a first resist pattern, and
applying a negative chemically amplified resist composition to said support having said first resist pattern formed thereon, thereby forming a second resist film, exposing a region of said second resist film that includes a position in which said first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases solubility of said first resist film in an alkali developing solution and decreases solubility of said second resist film in an alkali developing solution, and then performing developing to simultaneously remove unexposed portions of the second resist film and the first resist pattern within the exposed portions of the second resist film to form a resist pattern.
2. A method of forming a resist pattern according to claim 1 , wherein said first resist pattern comprises a line pattern and/or a dot pattern.
3. A method of forming a resist pattern according to claim 1 , wherein said negative chemically amplified resist composition comprises an organic solvent that does not dissolve said first resist film.
4. A method of forming a resist pattern according to claim 3 , wherein said organic solvent that does not dissolve said first resist film is at least one solvent selected from the group consisting of alcohol-based solvents, fluorine-based solvents, and ether-based organic solvents having no hydroxyl group.