High frequency module for filling level measurements in the W-band
A high-frequency module is for fill level measuring and for use at frequencies of more than 75 GHz. The high-frequency module comprises a microwave semiconductor, a printed circuit board and a housing bonded to the printed circuit board. In order to reduce the power required, operation of the microwave semiconductor takes place in a pulsed manner.
1. A high-frequency module for fill level measuring at frequencies of more than 75 gigahertz, comprising:
an electrically conductive housing;
at least one microwave semiconductor; and
a printed circuit board;
wherein the housing of the high-frequency module is electrically conductively bonded to the printed circuit board by means of a conductive adhesive material.
2. The high-frequency module according to claim 1 , wherein the housing is made of a zinc die-casted material.
3. The high-frequency module according to claim 1 , wherein the housing is made of a plastic injection-molded material which is metalized.
4. The high-frequency module according to claim 1 , wherein the housing includes an integrated separator element to shield against electromagnetic radiation, the separator element being made from metal.
5. The high-frequency module according to claim 1 , wherein the housing includes a separator element to shield against electromagnetic radiation, the separator element includes attenuation material.
6. The high-frequency module according to claim 1 , wherein the high-frequency module supplies voltage to the microwave semiconductor in pulsed operation.
7. The high-frequency module according to claim 6 , wherein in pulsed operation, in a switch-on process first a negative supply voltage and then a positive supply voltage is applied to the microwave semiconductor; and wherein in a switch-off process, first the positive supply voltage and then the negative supply voltage is switched off.
8. The high-frequency module according to claim 6 , wherein the microwave semiconductor is disposed on the printed circuit board.
9. The high-frequency module according to claim 8 , further comprising:
metallisation arranged between the microwave semiconductor and the printed circuit board.
10. The high-frequency module according to claim 6 , wherein the microwave semiconductor is bonded directly to the printed circuit board.
11. The high-frequency module according to claim 1 , further comprising:
at least one signal line on the printed circuit board, the signal line being connected to the microwave semiconductor.
12. The high-frequency module according to claim 1 , wherein the printed circuit board is a multilayer printed circuit board.
13. A fill level radar, comprising:
a high-frequency module with an electrically conductive housing including at least one microwave semiconductor; and
a printed circuit board;
wherein the housing of the high-frequency module is electrically conductively bonded to the printed circuit board by means of a conductive adhesive material.
14. A method for operating a fill level sensor with a high-frequency module with an electrically conductive housing, comprising:
supplying at least one microwave semiconductor of the high-frequency module with voltage in pulsed operation,
wherein the high-frequency module further includes a printed circuit board, and
wherein the housing of the high-frequency module is electrically conductively bonded to the printed circuit board by means of a conductive adhesive material.
15. The method according to claim 14 , further comprising:
applying a negative supply voltage and then applying a positive supply voltage to the microwave semiconductor for switching on the microwave semiconductor in a cycle of pulsed operation; and
switching off the positive supply voltage and then switching off the negative supply voltage for switching off the microwave semiconductor in the cycle of pulsed operation.