Semiconductor device and method for manufacturing the same
The present invention is a method for manufacturing a semiconductor device having a conductor and an insulating film on a substrate, the method including the steps of forming the conductor on the substrate, forming the insulating film on the conductor, removing the insulating film on the conductor, and blowing an organosilane gas and a hydrogen gas to reduce an oxidized region on the conductor, wherein the oxidized region on the conductor is formed when the insulating film is removed.
1. A method of manufacturing a semiconductor device having a conductor and an insulating film on a substrate, the method comprising the steps of:
forming the conductor on the substrate and the insulating film on the conductor;
removing the insulating film on the conductor;
blowing an organosilane gas and a hydrogen gas to reduce an oxidized region on the conductor after removing the insulating film; and
forming a barrier layer on the conductor after blowing the organosilane gas and the hydrogen gas, the barrier layer formed by using a gas that is different from the ones used to reduce the oxidized region;
where the barrier layer is in direct contact with the conductor.
2. A method of claim 1 , wherein the blowing step further includes a step of applying a microwave to the organosilane gas and the hydrogen gas.
3. A method of claim 1 , wherein the blowing step is to blow the organosilane gas and the hydrogen gas after raising temperature of the substrate within a range from 150 to 350 degrees Celsius.
4. A method of claim 1 , wherein the blowing step is to blow the organosilane gas and the hydrogen gas after raising temperature of the substrate within a range from 150 to 300 degrees Celsius.
5. A method of claim 1 , wherein the blowing step includes the step of blowing the hydrogen gas after blowing the organosilane gas.
6. A method of claim 1 , wherein the conductor is formed by a material including a copper.
7. A method of claim 1 , wherein the insulating film is a fluorocarbon film or a SiCN film.
8. A method of claim 1 , wherein the organosilane gas is a methylsilane gas.
9. A method of claim 1 , wherein the organosilane gas is a trimethylsilane gas.
10. A method of manufacturing a semiconductor device having multiple layers of insulating films on a substrate, the method comprising the steps of:
forming a conductor in the multiple layers;
forming an opening through the multiple layers;
reducing an oxidized part of the conductor when the conductor is oxidized by forming the opening by blowing an organosilane gas and a hydrogen gas; and
forming a barrier layer in the opening by using a gas that is different from the ones used to reduce the oxidized region;
wherein the barrier layer is in direct contact with the conductor.
11. A method of claim 10 , wherein the barrier layer is formed by a tantalum (Ta) or/and a tantalum nitride (TaN).
12. A method of claim 10 , wherein the barrier layer is formed by a titanium (Ti) or/and titanium nitride (TiN).
13. A method of claim 10 , further comprising the step of:
forming another conductor in the opening after forming the barrier layer.
14. A method of claim 10 , wherein the multiple layers are made of two different kinds of insulating films.
15. A method of claim 10 , wherein the organosilane gas is a trimethylsilane gas.