IP Library Granted Patent US 8,309,976
Granted Patent B2
US 8,309,976 · App. 13/035,029 · Granted Nov 13, 2012

Light emitting device and manufacturing method thereof

Assignee: Semiconductor Energy Laboratory Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,309,976
App. No.
13/035,029
Granted
Nov 13, 2012
Kind
B2
Abstract

A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19 , exposing a portion of the first electrode 18 c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18 b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18 c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1 A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18 c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).

Claims (53)

1. A display device comprising:

a transistor comprising a channel region, a source region, and a drain region;

a first conductive film comprising aluminum, the first conductive film being electrically connected to the source region or the drain region;

a second conductive film comprising molybdenum, the second conductive film being over the first conductive film and having a first opening;

an insulating film over the second conductive film, the insulating film having a second opening overlapped with the first opening; and

a third conductive film over the insulating film and in the second opening.

2. The display device according to claim 1 ,

wherein the second conductive film has an inclined surface with an angle of inclination larger than 50° and smaller than 60° in the first opening.

3. The display device according to claim 1 , wherein the third conductive film is a light transmitting conductive film.

4. The display device according to claim 1 , wherein the first opening in the second conductive film is formed by an etching process with a self-alignment manner using the insulating film as a mask.

5. The display device according to claim 1 , wherein the first conductive film functions as an anode and the third conductive film functions as a cathode.

6. The display device according to claim 1 ,

wherein the channel region comprises silicon.

7. The display device according to claim 1 ,

wherein the second conductive film is a light absorbing multi-layered film.

8. The display device according to claim 1 ,

wherein the second opening is overlapped with the first opening in a light-emitting region.

9. A display device comprising:

a transistor comprising a channel region, a source region, and a drain region;

a first conductive film comprising aluminum, the first conductive film being electrically connected to the source region or the drain region;

a second conductive film comprising molybdenum, the second conductive film being over the first conductive film and having a first opening;

an insulating film over the second conductive film, the insulating film having a second opening overlapped with the first opening;

a third conductive film over the insulating film and in the second opening; and

an auxiliary electrode over the third conductive film.

10. The display device according to claim 9 ,

wherein the second conductive film has an inclined surface with an angle of inclination larger than 50° and smaller than 60° in the first opening.

11. The display device according to claim 9 , wherein the third conductive film is a light transmitting conductive film.

12. The display device according to claim 9 , wherein the first opening in the second conductive film is formed by an etching process with a self-alignment manner using the insulating film as a mask.

13. The display device according to claim 9 , wherein the first conductive film functions as an anode and the third conductive film functions as a cathode.

14. The display device according to claim 9 ,

wherein the channel region comprises silicon.

15. The display device according to claim 9 ,

wherein the second conductive film is a light absorbing multi-layered film.

16. The display device according to claim 9

wherein the second opening is overlapped with the first opening in a light-emitting region.

17. A display device comprising:

a transistor comprising a channel region, a source region, and a drain region;

a first conductive film comprising aluminum, the first conductive film being electrically connected to the source region or the drain region;

a second conductive film comprising molybdenum, the second conductive film being over the first conductive film and having a first opening;

an insulating film over the second conductive film, the insulating film having a second opening overlapped with the first opening;

a third conductive film over the insulating film and in the second opening; and

a coloring layer over the third conductive film.

18. The display device according to claim 17 ,

wherein the second conductive film has an inclined surface with an angle of inclination larger than 50° and smaller than 60° in the first opening.

19. The display device according to claim 17 , wherein the third conductive film is a light transmitting conductive film.

20. The display device according to claim 17 , wherein the first opening in the second conductive film is formed by an etching process with a self-alignment manner using the insulating film as a mask.

21. The display device according to claim 17 , wherein the first conductive film functions as an anode and the third conductive film functions as a cathode.

22. The display device according to claim 17 ,

wherein the channel region comprises silicon.

23. The display device according to claim 17 ,

wherein the second conductive film is a light absorbing multi-layered film.

24. The display device according to claim 17

wherein the second opening is overlapped with the first opening in a light-emitting region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 2, 2011
From: UEDA, MASAHIRO; MORIYAMA, AYAO
To: SANYO ELECTRIC CO., LTD.; KOEI CHEMICAL CAMPANY, LIMITED
Reel/Frame 025887/0378 →
Priority Claims (1)
JP 2002-167758 · Jun 7, 2002 · national
Continuity (2)
Continuation 10454124 · Jun 4, 2003
Related Publication 20110193070A1 · Aug 11, 2011