Photo-detector array, semiconductor image intensifier and methods of making and using the same
A sensor including an array of light sensitive pixels, each pixel including: at least one hetero-junction phototransistor having a floating base without contact, wherein each phototransistor is a mesa device having active layers exposed at side-walls of the mesa device; and at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.
1. A method of fabricating an opto-electronic device comprising:
exposing active layers of at least one p-n or p-i-n junction as part of a mesa device at surrounding side-walls of the mesa device; and
depositing by Atomic Layer Deposition (ALD) at least one high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.
2. The method of claim 1 , wherein said device further comprising:
a plurality of p-n or p-i-n junctions as part of a common mesa having active layers exposed at side-walls of the mesa device; and
the at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.
3. The method of claim 2 , wherein the multiple junctions of said device are in a common semiconductor material system.
4. A method of fabricating a sensor comprising an array of light sensitive pixels, wherein each pixel comprises at least one hetero-junction phototransistor having a floating base without base contact metal, comprising at least the following two steps:
first, exposing active layers of each mesa phototransistor at phototransistor mesa side-walls; and
second, depositing by Atomic Layer Deposition (ALD) at least one high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.
5. The method of claim 4 , wherein each pixel of said sensor comprises a plurality of active p-n or p-i-n junctions, and is operated with one junction forward biased and another junction reverse biased.
6. The method of claim 4 , wherein each pixel of said sensor further comprises a second dielectric material deposited over and environmentally protecting the high-k dielectric material.
7. The method of claim 6 , wherein the second dielectric of said sensor forms a substantially planarizing layer.
8. The method of claim 6 , wherein the second dielectric of said sensor forms a substantially mesa conforming layer.
9. The method of claim 4 , wherein each pixel of said sensor further comprises at least one hetero-junction bipolar transistor being electrically coupled to the at least one phototransistor.
10. The method of claim 9 , wherein each pixel hetero-junction phototransistor of said sensor is monolithically integrated with the pixel hetero-junction bipolar transistor.
11. The method of claim 10 , wherein each hetero-junction bipolar transistor of said sensor is a mesa device having active layers exposed at side-walls of the mesa device; and
the at least one atomic layer deposited high-k dielectric material is adjacent to and passivating at least the side-wall exposed active layers of the hetero-junction phototransistor and hetero-junction bipolar transistor.
12. The method of claim 11 , wherein each pixel hetero-junction phototransistor of said sensor is vertically integrated with the pixel hetero-junction bipolar transistor and thus forming a photo-cascode.
13. The method of claim 12 , wherein said sensor further comprising an APS-CMOS readout circuit flip chip bonded to the photocascodes.
14. The method of claim 11 , wherein each pixel hetero-junction phototransistor of said sensor has an emitter contact coupled to the hetero-junction bipolar transistor base contact, thereby forming a photo-Darlington.
15. The method of claim 11 , wherein the phototransistor and bipolar transistor of said sensor are electrically coupled to form a photo-cascode.
16. The method of claim 9 wherein the at least one phototransistor and at least one bipolar transistor of said sensor share a common epitaxial structure.
17. The method of claim 9 , wherein said sensor further comprising:
a light emitting diode electrically coupled to a hetero-junction bipolar transistor.
18. The method of claim 4 , wherein the high-k dielectric of said sensor comprises aluminum oxide.
19. The method of claim 4 , wherein said sensor further comprising an electronic readout circuit electrically coupled to each of the sensor pixels.
20. The method of claim 4 , wherein said sensor further comprising a light emitting diode electrically coupled to the phototransistor.
21. The method of claim 4 , wherein said sensor further comprising:
an oscillator electrically coupled to the pixels; and
a light source electrically coupled to the oscillator and reflectively illuminating the pixels responsively to the oscillator;
wherein, excitation of the pixels by the oscillator directly homodynes received reflected transmissions with oscillator modulation of the light source and a gain of the pixels is modulated by the oscillator.
22. A method of fabricating an opto-electronic device comprising:
exposing active layers of at least one p-n or p-i-n junction as part of a mesa device at surrounding side-walls of the mesa device; and
depositing by Atomic Layer Deposition (ALD) at least one high-k dielectric material in direct physical contact with and passivating at least the side-wall exposed active layers.
23. A method of fabricating a sensor comprising an array of light sensitive pixels, wherein each pixel comprises:
at least one hetero-junction phototransistor having a floating base without base contact metal, comprising at least the following two steps:
first, exposing active layers of each mesa phototransistor at phototransistor mesa side-walls; and
second, depositing by Atomic Layer Deposition (ALD) at least one high-k dielectric material in direct physical contact with and passivating at least the side-wall exposed active layers.