Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
1. A solid-state imaging device having a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels, respectively, in first and second directions, where n is a positive integer,
wherein:
(1) a layout in the one sharing unit comprises
(a) a first structural portion and a second structural portion which are arranged in the first direction of a pixel portion, each of the first and second structural portions including four readout gate electrodes and one floating diffusion with respect to four photodiodes,
(b) at least an amplification transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion,
(c) a reset transistor,
(d) readout wirings which are connected to the readout gate electrodes, respectively,
(e) a reset wiring which is connected to a reset gate electrode of the reset transistor, and
(f) a connection wiring which is connected to the first floating diffusion, the second floating diffusion, an amplification gate electrode of the amplification transistor, and a source region of the reset transistor;
(2) the connection wiring, a power supply wiring, and a signal line connected to the amplification transistor are wired in the second direction of the pixel portion;
(3) the readout wirings and the reset wiring are wired in the first direction of the pixel portion;
(4) the connection wiring, the power supply wiring, the signal line, and the readout wirings of the pixel portion are formed in a two-layer wiring structure; and
(5) wirings of a peripheral circuit portion are formed in a multi-layer wiring structure with two or more layers.
2. The solid-state imaging device according to claim 1 , wherein:
the pixel portion and the peripheral circuit portion have a different number of wiring layers, and
an insulating film on a top-layer wiring in the pixel portion has a smaller film thickness than an insulating film on a top-layer wiring in the peripheral circuit portion.
3. A solid-state imaging device having a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels, respectively, in first and second directions, where n is a positive integer,
wherein:
(1) a layout in the one sharing unit comprises
(a) a first structural portion and a second structural portion which are arranged in the second direction of a pixel portion, each of the first and second structural portions including four readout gate electrodes and one floating diffusion with respect to four photodiodes,
(b) at least an amplification transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion,
(c) a reset transistor,
(d) readout wirings which are connected to the readout gate electrodes, respectively,
(e) a reset wiring which is connected to a reset gate electrode of the reset transistor, and
(f) a connection wiring which is connected to the first floating diffusion, the second floating diffusion, an amplification gate electrode of the amplification transistor, and a source region of the reset transistor; and
(2) a gate length of the amplification transistor is larger than a pixel pitch.
4. An electronic apparatus comprising:
a solid-state imaging device;
an optical system that guides incident light to photodiodes of the solid-state imaging device; and
a signal processing circuit that processes output signals from the solid-state imaging device,
wherein:
(1) the solid-state imaging device has a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels, respectively, in first and second directions, where n is a positive integer;
(2) a layout in the one sharing unit comprises:
(a) a first structural portion and a second structural portion which are arranged in the second direction of a pixel portion, each of the first and second structural portions including four readout gate electrodes and one floating diffusion with respect to four photodiodes,
(b) at least an amplification transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion,
(c) a reset transistor,
(d) readout wirings which are connected to the readout gate electrodes, respectively,
(e) a reset wiring which is connected to a reset gate electrode of the reset transistor, and
(f) a connection wiring which is connected to the first floating diffusion, the second floating diffusion, an amplification gate electrode of the amplification transistor, and a source region of the reset transistor;
(3) the connection wiring, a power supply wiring, and a signal line connected to the amplification transistor are wired in the second direction of the pixel portion;
(4) the readout wirings and the reset wiring are wired in the first direction of the pixel portion;
(5) the connection wiring, the power supply wiring, the signal line, and the readout wirings of the pixel portion are formed in a two-layer wiring structure; and
(6) wirings of a peripheral circuit portion are formed in a multi-layer wiring structure with two or more layers.
5. An electronic apparatus comprising:
a solid-state imaging device;
an optical system that guides incident light to photodiodes of the solid-state imaging device; and
a signal processing circuit that processes output signals from the solid-state imaging device,
wherein:
(1) the solid-state imaging device has a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels, respectively, in first and second directions, where n is a positive integer,
(2) a layout in the one sharing unit comprises
(a) a first structural portion and a second structural portion which are arranged in the second direction of a pixel portion, each of the first and second structural portions including four readout gate electrodes and one floating diffusion with respect to four photodiodes,
(b) at least an amplification transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion,
(c) a reset transistor,
(d) readout wirings which are connected to the readout gate electrodes, respectively,
(e) a reset wiring which is connected to a reset gate electrode of the reset transistor, and
(f) a connection wiring which is connected to the first floating diffusion, the second floating diffusion, an amplification gate electrode of the amplification transistor, and a source region of the reset transistor; and
(3) a gate length of the amplification transistor is larger than a pixel pitch.