Organic photoelectric conversion material and organic thin-film photoelectric conversion device

1. An organic thin-film photoelectric conversion device, having two electrode layers and an organic thin-film photoelectric conversion layer, wherein the photoelectric conversion layer comprises (i) an organic photoelectric conversion material comprising a compound represented by formula 1:

wherein D represents an electron-donating aromatic substituent whose bonding site atom is a sp 2 carbon atom; and a plurality of D may be the same or different from each other, and

(ii) an n-type organic semiconductor material.

2. The organic thin-film photoelectric conversion device according to claim 1 , wherein the photoelectric conversion layer has a blend film comprising both the organic photoelectric conversion material and the n-type organic semiconductor material.

3. The organic thin-film photoelectric conversion device according to claim 1 , wherein the n-type organic semiconductor material is at least one compound selected from the group consisting of a fullerene compound, a phthalocyanine compound, a naphthalene tetracarbonyl compound, and a perylene tetracarbonyl compound.

4. The organic thin-film photoelectric conversion device according to claim 1 , wherein the n-type organic semiconductor material is a fullerene compound.

5. The organic thin-film photoelectric conversion device according to claim 1 , wherein a film of the photoelectric conversion layer is formed by a solution-coating method.

6. The organic thin-film photoelectric conversion device according to claim 5 , wherein a solvent in the solution-coating method contains at least one solvent having a boiling point of 135° C. or more and less than 300° C.

7. The organic thin-film photoelectric conversion device according to claim 1 , further having a buffer layer containing an electrically conductive polymer, the buffer layer being disposed between at least one of the electrode layers and the organic photoelectric conversion layer.

8. The organic thin-film photoelectric conversion device according to claim 1 , which is sealed under an inert atmosphere after production of the organic thin-film photoelectric conversion device.

9. The organic thin-film photoelectric conversion device according to claim 1 , wherein the photoelectric conversion layer consists essentially of the organic photoelectric conversion material comprising the compound represented by formula 1 and the n-type organic semiconductor material.

10. The organic thin-film photoelectric conversion device according to claim 1 , wherein D in formula 1 is represented by any one of the following formulae D-1 to D-11:

wherein the mark “*” indicates a bonding site; A represents CR 2 , O, S, Se, Te, or NR; B represents CR or N; R represents a hydrogen atom or a substituent; m represents an integer; a plurality of R′s may be the same or different from each other; and a plurality of R′s may bond together to form a ring.

11. The organic thin-film photoelectric conversion device according to claim 1 , wherein D in formula 1 is represented by any one of the following formulae D-1, D-2, D-3, D-4, and D-6:

wherein the mark “*” indicates a bonding site; A represents CR 2 , O, S, Se, Te, or NR; B represents CR or N; R represents a hydrogen atom, or a substituent; m represents an integer; a plurality of R′s may be the same or different from each other; and a plurality of R′s may bond together to form a ring.

12. The organic thin-film photoelectric conversion device according to claim 1 , wherein the compound represented by formula 1 is any one of exemplified compounds 1 to 38:

13. The organic thin-film photoelectric conversion device according to claim 1 , wherein a thickness of the photoelectric conversion layer is 5 nm to 500 nm.