Film thin waveguides, methods of fabrication thereof, and detection systems
Briefly described, embodiments of this disclosure, among others, include solid state, thin film waveguides, detection systems including waveguides, and methods of detecting target compounds.
1. An evanescent field absorption, symmetrical solid state, thin film waveguide comprising:
a substrate having a core layer disposed thereon, the core layer has a thickness of about 2 to 1000 μm, wherein the core layer is made of a material selected from: group III-V materials, composites thereof, and combinations thereof, wherein the waveguide is configured so that an evanescent field of light protrudes from the core layer on the side opposite the substrate, wherein the evanescent field of light interacts with a sample disposed adjacent the core.
2. The symmetrical solid state, thin film waveguide of claim 1 , wherein the core layer has a thickness selected from: about 2 to 5, about 2 to 12, about 5 to 8, about 5 to 12, about 5 to 15, about 5 to 20, about 8 to 12, about 8 to 15, about 8 to 20, about 2 to 15, about 2 to 20, and about 10 to 20 μm.
3. The symmetrical solid state, thin film waveguide of claim 1 , wherein the core layer has a thickness selected from: about 10 to 50, about 20 to 50, about 20 to 100, about 50 to 100, and about 50 to 200 μm.
4. The symmetrical solid state, thin film waveguide of claim 1 , wherein the core layer has a thickness of about 100 to 1000 μm.
5. The symmetrical solid state, thin film waveguide of claim 1 , wherein the material is selected from: GaAs, AlGaAs, AlAsSb, InAs, InP, InSb, Sb, InSb, AlAs, AlInAs, GaInAs, AlSb, GaSb, InAs, SiGe, GaN, AlN, AlGaN, InGaN, and GaP.
6. The symmetrical solid state, thin film waveguide of claim 1 , further comprising a protective layer disposed on the core layer, wherein the evanescent field of light protrudes from the core layer and the protective layer.
7. An evanescent field absorption, asymmetrical solid state, thin film waveguide comprising:
a substrate, a cladding layer, and a core layer, wherein the cladding layer is disposed on the substrate, wherein the core layer is disposed on the cladding layer, wherein the combination of the thickness of the core layer and the cladding layer is about 2 to 1000 μm, wherein the core layer is made of a first material selected from: group III-V materials, composites thereof, and combinations thereof, wherein the cladding layer is made of a second material selected from: group III-V materials, composites thereof, and combinations thereof, wherein the core layer and the cladding layer have different refractive indices, wherein the waveguide is configured so that an evanescent field of light protrudes from the core layer, wherein the evanescent field of light is asymmetrically positioned within the core layer and the cladding layer so that unequal portions of an evanescent tail of the evanescent field of light extends out of the top and bottom of the core layer, wherein the evanescent field of light interacts with a sample disposed adjacent the core.
8. The asymmetrical solid state, thin film waveguide of claim 7 , wherein each of the cladding layer and the core layer have a thickness selected from: about 2 to 5, about 2 to 12, about 5 to 8, about 5 to 12, about 5 to 15, about 5 to 20, about 8 to 12, about 8 to 15, about 8 to 20, about 2 to 15, about 2 to 20, and about 10 to 20 μm.
9. The asymmetrical solid state, thin film waveguide of claim 7 , wherein each of the cladding layer and the core layer have a thickness selected from: about 10 to 50, about 20 to 50, about 20 to 100, about 50 to 100, and about 50 to 200 μm.
10. The asymmetrical solid state, thin film waveguide of claim 7 , wherein each of the cladding layer and the core layer have a thickness of about 100 to 1000 μm.
11. The asymmetrical solid state, thin film waveguide of claim 7 , wherein each of the first material and the second material are independently selected from: GaAs, AlGaAs, AlAsSb, InAs, InP, InSb, Sb, InSb, AlAs, AlInAs, GaInAs, AlSb, GaSb, InAs, SiGe, GaN, AlN, AlGaN, InGaN, and GaP, wherein the first material and the second material are different materials and have different refractive indices.
12. The asymmetrical solid state, thin film waveguide of claim 7 , further comprising a protective layer disposed on the core layer, wherein the protective layer is selected from: Si 3 N 4 , SiO 2 , diamond, carbon-like diamond, polymers, and combinations thereof, wherein the evanescent field of light protrudes from the core layer and the protective layer.