Dummy fill to reduce shallow trench isolation (STI) stress variation on transistor performance
View Patent ↗A method of forming an integrated circuit structure on a chip includes extracting an active layer from a design of the integrated circuit structure, forming a guard band conforming to the shape of the active layer, the guard band surrounds the active layer, and the guard band is spaced from the active layer at a first spacing in the X-axis direction and at a second spacing in the Y-axis direction, removing any part of the guard band that violates design rules, removing convex corners of the guard band, and adding dummy diffusion patterns into the remaining space of the chip outside the guard band. The first and second spacing can be specified as the same spacings in a Spice model characterization of the integrated circuit structure. The dummy diffusion patterns with different granularities can be added so that the diffusion density is substantially uniform over the chip.
1. A method of forming an integrated circuit structure on a chip, the method comprising:
extracting an active layer from a design of the integrated circuit structure, wherein the active layer comprises an active pattern having a diffusion region;
forming, using a processor, at least one guard band conforming to a shape of the active layer, wherein the guard band is a dummy diffusion layer, the guard band surrounds the active layer without a break, and the guard band is spaced from the active layer at a first constant spacing in a X-axis direction and at a second constant spacing in a Y-axis direction, which is perpendicular to the X-axis direction;
removing any part of the guard band that violates design rules;
removing convex corners of the guard band; and
adding dummy diffusion patterns into a remaining space of the chip outside the guard band.
2. The method of claim 1 , further comprising
adding a block layer before forming the guard band, wherein no dummy diffusion layers are added in the block layer.
3. The method of claim 1 , wherein the first constant spacing is the same as a third constant spacing in the X-direction used in a Spice model characterization of the integrated circuit structure.
4. The method of claim 1 , wherein the second constant spacing is the same as a fourth constant spacing in the Y-direction used in a Spice model characterization of the integrated circuit structure.
5. The method of claim 1 , further comprising cutting the guard band that is longer than a specified length, wherein the length is determined by design rules.
6. The method of claim 1 , wherein the dummy diffusion patterns have different granularities.
7. The method of claim 1 , wherein the dummy diffusion patterns are added so that a diffusion density is substantially uniform over the chip.
8. A method of forming an integrated circuit structure on a chip, the method comprising:
extracting an active layer from a design of the integrated circuit structure, wherein the active layer comprises an active pattern having a diffusion region;
forming, using a processor, at least one guard band conforming to a shape of the active layer, wherein the guard band is a dummy diffusion layer, the guard band surrounds the active layer without a break, and the guard band is spaced from the active layer at a first constant spacing in a X-axis direction and at a second constant spacing in a Y-axis direction, which is perpendicular to the X-axis direction, wherein the first constant spacing and the second constant spacing are the same values used in a Spice model characterization;
removing any part of the guard band that violates design rules;
removing convex corners of the guard band; and
adding dummy diffusion patterns into a remaining space of the chip outside the guard band.
9. The method of claim 8 , further comprising
adding a block layer before forming the guard band, wherein no dummy diffusion patterns are added in the block layer.
10. The method of claim 8 , further comprising cutting the guard band that is longer than a specified length, wherein the length is determined by design rules.
11. The method of claim 8 , wherein the dummy diffusion patterns have different granularities.
12. The method of claim 8 , wherein the dummy diffusion patterns are added so that a diffusion density is substantially uniform over the chip.
13. A method of forming an integrated circuit structure on a chip, the method comprising:
extracting an active layer from a design of the integrated circuit structure, wherein the active layer comprises an active pattern having a diffusion region;
forming, using a processor, at least one guard band conforming to a shape of the active layer, wherein the guard band is a dummy diffusion layer, the guard band surrounds the active layer, the guard band is spaced from the active layer at a first constant spacing in a X-axis direction and at a second constant spacing in a Y-axis direction, which is perpendicular to the X-axis direction, and there is no guard band at locations where convex corners are necessary in order to have a continuous guard band; and
adding dummy diffusion patterns into a remaining space of the chip outside the guard band.
14. The method of claim 13 , further comprising removing any part of the guard band that violates design rules.
15. The method of claim 13 , further comprising adding a block layer before forming the guard band, wherein no dummy diffusion patterns are added in the block layer.
16. The method of claim 13 , wherein the first spacing is the same as a third constant spacing in the X-direction used in a Spice model characterization of the integrated circuit structure.
17. The method of claim 13 , wherein the second spacing is the same as a fourth constant spacing in the Y-direction used in a Spice model characterization of the integrated circuit structure.
18. The method of claim 13 , wherein the guard band is split if the guard band is longer than a specified length, wherein the length is determined by design rules.
19. The method of claim 13 , wherein the dummy diffusion patterns have different granularities.
20. The method of claim 13 , wherein the dummy diffusion patterns are added so that a diffusion density is substantially uniform over the chip.