IP Library › Granted Patent US 8,324,601
Granted Patent B2
US 8,324,601 · App. 12/943,090 · Granted Dec 4, 2012

Extreme ultra violet light source apparatus

Assignee: Gigaphoton Inc.
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Quick Facts
Patent No.
US 8,324,601
App. No.
12/943,090
Granted
Dec 4, 2012
Kind
B2
Abstract

An extreme ultra violet light source apparatus by which EUV light can be efficiently obtained uses a driver laser which can realize a desired pulse width with substantially homogeneous intensity. The apparatus generates extreme ultra violet light by applying a laser beam to a target, and includes a chamber in which extreme ultra violet light is generated; a target supply unit which supplies a liquid or solid metal target to a predetermined position within the chamber; a laser beam generating unit which synthesizes pulse laser beams having delays different from one another to generate a single pulse laser beam or a pulse train laser beam having substantially homogeneous intensity, and applies the laser beam to the target supplied by the target supply unit to generate plasma; and a collector mirror which collects the extreme ultra violet light radiated from the plasma and outputs it.

Claims (41)

1. An extreme ultraviolet light source apparatus for outputting extreme ultraviolet light by irradiating a target material with a laser beam, said apparatus comprising:

a chamber;

a target supply unit configured to supply the target material into said chamber;

plural oscillation laser devices configured to output laser beams having intensities different from one another;

a beam splitter arranged on at least one of optical paths of the laser beams;

a beam synthesizer configured to synthesize the laser beams outputted from said plural oscillation laser devices such that at least one of the laser beams is delayed due to a difference between an optical path thereof and an optical path of other laser beam; and

an amplification device configured to amplify the laser beams synthesized by said beam synthesizer.

2. The extreme ultraviolet light source apparatus according to claim 1 , wherein at least one of said plural oscillation laser devices is an oscillation laser device of an EO (electro optic) cavity dump type.

3. The extreme ultraviolet light source apparatus according to claim 1 , wherein at least one of said plural oscillation laser devices includes an optical switch.

4. The extreme ultraviolet light source apparatus according to claim 3 , wherein said optical switch includes a crystal of Cd/Te, and said at least one of said plural oscillation laser devices including said optical switch adjusts a voltage waveform to be applied to said crystal of Cd/Te.

5. The extreme ultraviolet light source apparatus according to claim 1 , wherein said beam synthesizer includes one of a prism, a polarizer, and a mirror having a three-dimensional shape.

6. An extreme ultraviolet light source apparatus for outputting extreme ultraviolet light by irradiating a target material with a laser beam, said apparatus comprising:

a chamber;

a target supply unit configured to supply the target material into said chamber;

plural oscillation laser devices configured to output laser beams having intensities different from one another, at different timings;

a beam splitter arranged on at least one of optical paths of the laser beams;

a beam synthesizer configured to synthesize the laser beams outputted from said plural oscillation laser devices; and

an amplification device configured to amplify the laser beams synthesized by said beam synthesizer.

7. The extreme ultraviolet light source apparatus according to claim 6 , wherein at least one of said plural oscillation laser devices is an oscillation laser device of an EO (electro optic) cavity dump type.

8. The extreme ultraviolet light source apparatus according to claim 6 , wherein at least one of said plural oscillation laser devices includes an optical switch.

9. The extreme ultraviolet light source apparatus according to claim 8 , wherein said optical switch includes a crystal of Cd/Te, and said at least one of said plural oscillation laser devices including said optical switch adjusts a voltage waveform to be applied to said crystal of Cd/Te.

10. The extreme ultraviolet light source apparatus according to claim 6 , wherein said beam synthesizer includes one of a prism, a polarizer, and a mirror having a three-dimensional shape.

11. An extreme ultraviolet light source apparatus for outputting extreme ultraviolet light by irradiating a target material with a laser beam, said apparatus comprising:

a chamber;

a target supply unit configured to supply the target material into said chamber;

plural oscillation laser devices configured to output laser beams as pulse trains having intensities which change with time;

a beam synthesizer configured to synthesize the laser beams outputted from said plural oscillation laser devices; and

an amplification device configured to amplify the laser beams synthesized by said beam synthesizer.

12. The extreme ultraviolet light source apparatus according to claim 11 , wherein at least one of said plural oscillation laser devices is an oscillation laser device of an EO (electro optic) cavity dump type.

13. The extreme ultraviolet light source apparatus according to claim 11 , wherein at least one of said plural oscillation laser devices includes an optical switch.

14. The extreme ultraviolet light source apparatus according to claim 13 , wherein said optical switch includes a crystal of Cd/Te, and said at least one of said plural oscillation laser devices including said optical switch adjusts a voltage waveform to be applied to said crystal of Cd/Te.

15. The extreme ultraviolet light source apparatus according to claim 11 , wherein said beam synthesizer includes one of a prism, a polarizer, and a mirror having a three-dimensional shape.

16. An extreme ultraviolet light source apparatus for outputting extreme ultraviolet light emitted from plasma generated by irradiating a target material with a laser beam, said apparatus comprising:

a chamber;

a target supply unit configured to supply the target material into said chamber;

plural oscillation laser devices configured to output laser beams having intensities different from one another;

an amplification device configured to amplify the laser beams; and

a collector mirror configured to collect and output the extreme ultraviolet light emitted from said plasma, and formed with plural openings at least one of which the laser beams pass through.

17. The extreme ultraviolet light source apparatus according to claim 16 , wherein at least one of said plural oscillation laser devices is an oscillation laser device of an EO (electro optic) cavity dump type.

18. The extreme ultraviolet light source apparatus according to claim 16 , wherein at least one of said plural oscillation laser devices includes an optical switch.

19. The extreme ultraviolet light source apparatus according to claim 18 , wherein said optical switch includes a crystal of Cd/Te, and said at least one of said plural oscillation laser devices including said optical switch adjusts a voltage waveform to be applied to said crystal of Cd/Te.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2012
From: KOMATSU LTD.
To: GIGAPHOTON INC.
Reel/Frame 028626/0843 →
Priority Claims (1)
JP 2007-039811 · Feb 20, 2007 · national
Continuity (2)
Continuation 12071352 · Feb 20, 2008
Related Publication 20110057126A1 · Mar 10, 2011