Semiconductor component
A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50%, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are of an easily solderable material.
1. A semiconductor component comprising:
a two-dimensional semiconductor substrate having a first side, a second side arranged opposite to said first side, a surface normal which is perpendicular to said first side and said second side and a plurality of recesses which are at least arranged on the second side and extend in a direction of the surface normal;
at least one dielectric passivation layer arranged on the second side;
an electrically conducting contact layer arranged on the passivation layer;
a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, said contact elements being electrically conductive, said contact elements being in electrically conducting connection with the semiconductor substrate and the contact layer, said contact elements filling at least 50% of at least one of the recesses, said contact elements projecting beyond the recesses with a projection in a direction perpendicular to the surface normal, said contacts comprising a solderable material, wherein the recesses are arranged in a regular pattern on the second side of the semiconductor substrate, which pattern comprises at least two portions, with adjacent recesses in a first portion having a first distance while adjacent recesses in the second portion have a second distance that is less than said first distance in at least one direction.
2. A semiconductor component according to claim 1 , wherein the recesses are arranged at corner points of a regular lattice in at least one of the at least two portions.
3. A semiconductor component according to claim 2 , wherein the recesses are arranged at the corner points of a hexagonal lattice in at least one of the at least two portions.
4. A semiconductor component according to claim 1 , wherein the first distance is more than twice a size of the projection of the contact elements beyond the recesses in the direction of the surface normal.
5. A semiconductor component according to claim 1 , wherein the second distance is less than twice a size of the projection of the contact elements beyond the recesses in the direction perpendicular to the surface normal so that adjacent contact elements are in contact with each other by means of said projections of said adjacent contact elements to form a coherent second contact structure.
6. A semiconductor component according to claim 5 , wherein the second contact structure comprises at least one linear busbar.
7. A semiconductor component according to claim 6 , wherein the second contact structure comprises linear transverse contacts.
8. A semiconductor component according to claim 7 , wherein the linear transverse contacts are arranged perpendicular to the at least one linear busbar.
9. A semiconductor component according to claim 1 , wherein the second distance is in a range of 10 μm to 200 μm.
10. A semiconductor component according to claim 9 , wherein the second distance is in the range of 50 μm to 120 μm.
11. A semiconductor component according to claim 9 , wherein the second distance is in the range of 80 μm to 100 μm.
12. A semiconductor component according to claim 6 , wherein on the first side, a contact structure is provided which corresponds to in each case one linear contact structure, the contact structures being in line with each other in the direction of the surface normal.