IP Library Granted Patent US 8,336,014
Granted Patent B1
US 8,336,014 · App. 12/852,942 · Granted Dec 18, 2012

Computationally efficient modeling and simulation of large scale systems

Assignee: Purdue Research Foundation
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Quick Facts
Patent No.
US 8,336,014
App. No.
12/852,942
Granted
Dec 18, 2012
Kind
B1
Abstract

A method of simulating operation of a VLSI interconnect structure having capacitive and inductive coupling between nodes thereof. A matrix X and a matrix Y containing different combinations of passive circuit element values for the interconnect structure are obtained where the element values for each matrix include inductance L and inverse capacitance P. An adjacency matrix A associated with the interconnect structure is obtained. Numerical integration is used to solve first and second equations, each including as a factor the product of the inverse matrix X −1 and at least one other matrix, with first equation including X −1 Y, X −1 A, and X −1 P, and the second equation including X −1 A and X −1 P.

Claims (25)

1. A method of simulating operation of a VLSI interconnect structure having capacitive and inductive coupling between nodes thereof, comprising:

obtaining a matrix U and a matrix V containing different combinations of passive circuit element values for said interconnect structure, said element values for each matrix including inverse inductance K and capacitance C;

obtaining an adjacency matrix A associated with said interconnect structure;

using a processor to perform numerical integration to solve first and second equations each including as a factor the product of the inverse matrix U −1 and at least one other matrix, said first equation including U −1 V and U −1 A, and said second equation including U −1 A and U −1 K.

2. The method of claim 1 , wherein matrices U and V each contain conductance values G in addition to K and C.

3. The method of claim 2 , wherein said first equation is substantially of the form

v n k+1 =U −1 Vv n k −2 U −1 A l T i l k +U −1 A i T ( I s k+1 +I s k ),

where v n and i l are node voltages and inductor currents, respectively, A l is an adjacency matrix for inductance, and I s is a current source vector with adjacency matrix A i ; and

wherein said second equation is substantially of the form

2 U −1 A l T i l k+1 =2 U −1 A l T i l k +hU −1 S ( v n k+1 +v n k ),

where S=A l KA l T .

4. The method of claim 3 , wherein matrices U −1 V, U −1 A l T , U −1 A i T and U −1 S are substantially sparsified matrices, said method further comprising precomputing and storing said substantially sparsified matrices U −1 V, U −1 A l T , U −1 A i T and U −1 S.

5. The method of claim 4 , wherein said numerical integration is performed with matrix-vector multiplication limited to multiplication of substantially sparse matrices.

6. A method of simulating operation of a VLSI interconnect structure having capacitive and inductive coupling between nodes thereof, comprising:

obtaining a matrix U and a matrix V containing combinations of passive circuit element values for said interconnect structure, said element values for each matrix including conductance G, inverse inductance K, and capacitance C;

obtaining an adjacency matrix A associated with said interconnect structure; and

using a processor to perform numerical integration to solve first and second equations each including as a factor the product of the inverse matrix U −1 and at least one other matrix, said first equation including U −1 V and U −1 A, and said second equation including U −1 A and U −1 K.

7. The method of claim 6 , wherein matrices U −1 V, U −1 A and U −1 K are substantially sparsified matrices, said method further comprising precomputing and storing said substantially sparsified matrices U −1 V, U −1 A and U −1 K.

8. The method of claim 7 , wherein said numerical integration is performed with matrix-vector multiplication limited to multiplication of substantially sparse matrices.

9. The method of claim 8 , wherein said first equation is substantially of the form

v n k+1 =U −1 Vv n k −2 U −1 A l T i l k +U −1 A i T ( I s k+1 +I s k ),

where v n and i l are node voltages and inductor currents, respectively, A l is an adjacency matrix for inductance, and I s is a current source vector with adjacency matrix A i ; and

wherein said second equation is substantially of the form

2 U −1 A l T i l k+1 =2 U −1 A l T i l k +hU −1 S ( v n k+1 +v n k ),

where S=A l KA l T .

Assignments (1)
CONFIRMATORY LICENSE Recorded Dec 29, 2011
From: PURDUE UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 027464/0086 →
Continuity (3)
Division 11593465 · Nov 6, 2006
Provisional Application 60733460 · Nov 4, 2005
Provisional Application 60740990 · Nov 30, 2005