IP Library Granted Patent US 8,337,949
Granted Patent B2
US 8,337,949 · App. 12/122,293 · Granted Dec 25, 2012

Graphene pattern and process of preparing the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,337,949
App. No.
12/122,293
Granted
Dec 25, 2012
Kind
B2
Abstract

Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Claims (33)

1. A process of preparing a graphene pattern, the process comprising:

disposing a graphitizing catalyst on at least one surface of a substrate;

removing a portion of the graphitizing catalyst to form a graphitizing catalyst pattern;

contacting the graphitizing catalyst pattern with a carbonaceous material to form a self-assembled monolayer of the carbonaceous material; and

forming graphene on the graphitizing catalyst pattern by heat-treating the graphitizing catalyst pattern and the carbonaceous material in an inert or reductive atmosphere to form the graphene pattern, wherein a shape of the graphene pattern corresponds to a shape of the graphitizing catalyst pattern.

2. The process of claim 1 , wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material.

3. The process of claim 1 , wherein the graphitizing catalyst has a single crystalline structure.

4. The process of claim 1 , wherein the contacting the graphitizing catalyst pattern with the carbonaceous material comprises:

(a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed;

(b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or

(c) immersing the substrate on which the graphitizing catalyst pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant.

5. The process of claim 1 , wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr.

6. The process of claim 1 , wherein the heat-treating is performed at a temperature in the range of 400 to 2,000° C. for 0.1 to 10 hours.

7. The process of claim 1 , further comprising removing the graphitizing catalyst pattern by an acid-treatment after the heat-treatment.

8. The process of claim 1 , herein the removing a portion of the graphitizing catalyst pattern comprises etching.

9. A process of preparing a graphene pattern, the process comprising:

forming a graphitizing catalyst on at least one surface of a substrate;

contacting the graphitizing catalyst with a carbonaceous material to form a coating comprising a self-assembled monolayer of the carbonaceous material on the graphitizing catalyst; and

selectively heat-treating a portion of the coating of the carbonaceous material in an inert or reductive atmosphere to form the graphene pattern on the graphitizing catalyst, wherein a shape of the graphene pattern corresponds to a shape of the selectively heat-treating.

10. The process of claim 9 , wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material.

11. The process of claim 9 , wherein the graphitizing catalyst has a single crystalline structure.

12. The process of claim 9 , wherein the contacting the graphitizing catalyst pattern with the carbonaceous material comprises:

(a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed;

(b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or

(c) immersing the substrate on which the graphitizing catalyst is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant.

13. The process of claim 9 , wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ti, V, W U, V and Zr.

14. The process of claim 9 , wherein the selectively heat-treating is performed at a temperature in the range of 400 to 2,000° C. for 0.1 to 10 hours.

15. The process of claim 9 , further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment.

16. A process of preparing a graphene pattern, the process comprising:

printing a graphitizing catalyst on at least one surface of a substrate to form a graphitizing catalyst pattern;

contacting the graphitizing catalyst pattern with a carbonaceous material to form a coating comprising a self-assembled monolayer of the carbonaceous material on the graphitizing catalyst pattern; and

forming graphene on the graphitizing catalyst pattern by heat-treating the graphitizing catalyst pattern and the coating of the carbonaceous material in an inert or reductive atmosphere to form the graphene pattern, wherein a shape of the graphene pattern corresponds to a shape of the graphitizing catalyst pattern.

17. The process of claim 16 , wherein a shape of the coating of the carbonaceous material corresponds to a shape of the graphitizing catalyst pattern.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2008
From: CHOI, JAE-YOUNG; SHIN, HYEON-JIN; YOON, SEON-MI
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 020960/0731 →
Priority Claims (2)
KR 10-2007-0094895 · Sep 18, 2007 · national
KR 10-2008-0023458 · Mar 13, 2008 · national
Continuity (1)
Related Publication 20090324897A1 · Dec 31, 2009