Shared photodiode image sensor
View Patent ↗An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
1. An image sensor with a shared photodiode, comprising:
at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region,
wherein photodiodes of neighboring unit pixels from the at least two unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode, the photodiodes of the neighboring unit pixels physically touching each other, and a detection signal is generated when a turn on signal is simultaneously applied to the transfer transistors of the neighboring unit pixlels that are connected to the shared photodiode; and
a separation wall that forms an energy barrier in the shared photodiode to separate incident light within the shared photodiode.
2. The image sensor of claim 1 , wherein transfer transistors of the neighboring unit pixels, with respect to the shared photodiode, are disposed symmetrically centering on the shared photodiode.
3. The image sensor of claim 2 , wherein the shared photodiode is formed from the photodiodes of four neighboring unit pixels from the at least two unit pixels that are disposed symmetrically to be adjacent to one another, and the four transfer transistors of the four neighboring unit pixels are disposed symmetrically centering on the shared photodiode.
4. The image sensor of claim 3 , wherein the shared photodiode has a diamond shape, and the four transfer transistors are positioned at corner regions of the diamond shape, respectively.
5. The image sensor of claim 3 , wherein readout signals from neighboring shared photodiodes are combined to generate one detection signal.
6. The image sensor of claim 5 , wherein the one detection signal corresponds to a sum of the readout signals from the neighboring shared photodiodes.
7. The image sensor of claim 1 wherein the separation wall is formed by forming a wiring on the shared photodiode, and the energy barrier is formed when a voltage is applied to the wiring.
8. The image sensor of claim 1 , wherein the separation wall is formed by forming an ion-doped region in the shared photodiode.
9. The image sensor of claim 7 , wherein the wiring includes a metallic line or a poly wiring.
10. The image sensor of claim 1 , wherein the separation wall is a wiring disposed over the shared photodiode, and the energy barrier is formed when a voltage is applied to the wiring.
11. The image sensor of claim 10 , wherein the shared photodiode has a first side, a second side opposite the first side and a surface that extends from the first side to the second side, the separation wall having a portion that extends from the first side to the second side, the entirety of the portion being disposed only over the shared photodiode, the portion being on a line that is perpendicular to the surface of the shared photodiode.
12. The image sensor of claim 10 , wherein the shared photodiode has a first side, a second side opposite the first side and a surface that extends from the first side to the second side, the separation wall having a first portion that extends from the first side to the second side, the entirety of the first portion being disposed only over the shared photodiode, the first portion being on a line that is perpendicular to the surface of the shared photodiode,
wherein the shared photodiode has a third side and a fourth side opposite the third side, the separation wall having a second portion that extends from the third side to the fourth side, the entirety of the second portion being disposed only over the shared photodiode, the second portion being on another line that is perpendicular to the surface of the shared photodiode, and
wherein the first portion and the second portion are perpendicular to each other.
13. The image sensor of claim 10 , wherein the shared photodiode has a first side, a second side opposite the first side and a surface that extends from the first side to the second side, the separation wall having a portion that extends from the first side to the second side, the entirety of the portion being disposed only on lines that are each perpendicular to the surface of the shared photodiode.
14. The image sensor of claim 10 , wherein the shared photodiode includes an ion-doped separation region, and the separation wall forms the energy barrier through the ion-doped separation region.
15. The image sensor of claim 1 , wherein the shared photodiode of the neighboring unit pixels is disposed at a center region of the neighboring unit pixels, and the transfer transistors and the diffusion regions of the neighboring unit pixels are disposed at an edge region of the neighboring unit pixels,
wherein the transfer transistors and the diffusion regions of the neighboring unit pixels are symmetrically disposed so as to form mirror symmetry in the image sensor.