CMOS image sensor

1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:

a first light-receiving unit to convert light into charge;

a first floating diffusion region to receive a charge from the first light-receiving unit which is transmitted through a first transfer transistor, to generate a first potential corresponding to the charge;

a second floating diffusion region to receive a charge from the first floating diffusion region which is transmitted through a second transfer transistor, to generate a second potential,

wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitivity signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output, and

wherein the first floating diffusion region is connected to a first reset transistor and the second floating diffusion region is disposed between the second transfer transistor and a second reset transistor, and the first and second floating diffusion regions are not connected to a capacitor.

2. The CMOS image sensor of claim 1 , wherein:

the first floating diffusion region is connected to a second light-receiving unit, and

the first light-receiving unit and the second light-receiving unit share the first floating diffusion region and the second floating diffusion region.

3. The CMOS image sensor of claim 1 , wherein:

the first floating diffusion region has a capacitance larger than the second floating diffusing region.

4. The CMOS image sensor of claim 1 , wherein:

the wide dynamic range signal acquired from the first floating diffusion region is output through a first drive transistor and a first select transistor,

the high-sensitively signal acquired from the second floating diffusion region is output through a second drive transistor and a second select transistor, and the acquired signals are then synthesized and output.

5. The CMOS image sensor of claim 2 , wherein:

the first transfer transistor is disposed between the first light-receiving unit and the first floating diffusion region, and the second transfer transistor is disposed between the second light-receiving unit and the first floating diffusion region, and

the sharing of the first floating diffusion region and the second floating diffusion region by the first light-receiving unit and the second light-receiving unit comprises:

when the first transfer transistor operates, the charge converted by the first light-receiving unit is transmitted to the first floating diffusion region and the second floating diffusion region, and the second transfer transistor does not operate; and

when the second transfer transistor operates, a charge converted by the second light-receiving unit is transmitted to the first floating diffusion region and the second floating diffusion region, and the first transfer transistor does not operate.

6. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:

a plurality of pixels,

wherein each of the pixels includes a first floating diffusion region, in which image information is recognized over a wide range of illuminance, and a second floating diffusion region, in which image information is recognized with high sensitivity, and

signals acquired from the first floating diffusion region and the second floating diffusion region are synthesized, to thereby provide an image signal for the pixel, and

the first floating diffusion region is disposed between a first transfer transistor and a first reset transistor and the second floating diffusion region is disposed between a second transfer transistor and a second reset transistor, and the first and second floating diffusion regions are not connected to a capacitor.

7. The CMOS image sensor of claim 6 , wherein at least two pixels among the plurality of pixels share the first floating diffusion region and the second floating diffusion region.

8. The CMOS image sensor of claim 6 , wherein a first gate-driving voltage of a transistor, which generates a corresponding potential in the first floating diffusion region, is different from a second gate-driving voltage of a transistor, which generates a corresponding potential in the second floating diffusion region.

9. The CMOS image sensor of claim 6 , wherein:

the first floating diffusion region has a capacitance larger than the second floating diffusing region.

10. The CMOS image sensor of claim 6 , wherein:

the signal acquired from the first floating diffusion region is output through a first drive transistor and a first select transistor,

the signal acquired from the second floating diffusion region is output through a second drive transistor and a second select transistor, and the acquired signals are then synthesized to provide an image signal.

11. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:

a first light-receiving unit to convert light into charge;

a first floating diffusion region, in which a first potential corresponding to the converted amount of charge is generated; and

a second floating diffusion region, to which the charge in the first floating diffusion region is transmitted, and in which a second potential is generated,

wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitivity signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output, and the first floating diffusion region has a capacitance larger than the second floating diffusing region.

12. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:

a plurality of pixels,

wherein each of the pixels includes a first floating diffusion region, in which image information is recognized over a wide range of illuminance, and a second floating diffusion region, in which image information is recognized with high sensitivity, and

signals acquired from the first floating diffusion region and the second floating diffusion region are synthesized, to thereby provide an image signal for the pixel, and

the first floating diffusion region has a capacitance larger than the second floating diffusing region.