Resist underlayer film forming composition
It is a problem to provide a resist underlayer film forming composition containing a fullerene derivative, which is easily applied on a substrate and from which a resist underlayer film excellent in dry etching properties can be obtained. The problem is solved by for example a resist underlayer film forming composition comprising: a fullerene derivative represented by Formula (3): (where, R 4 represents one group selected from a group consisting of a hydrogen atom, an alkyl group which optionally has a substituent, an aryl group which optionally has a substituent and a heterocyclic group which optionally has a substituent; and R 5 represents an alkyl group which optionally has a substituent or an aryl group which optionally has a substituent); and an organic solvent.
1. A resist underlayer film forming composition comprising:
a mixture of fullerene derivatives represented by Formula (1):
wherein
R 1 represents an aryl group which optionally has a substituent,
R 2 represents an ester group (—COOR 3 where, R 3 represents an alkyl group) or an alkyl group which optionally has a substituent, and
n represents an integer of 2 and 3, respectively; and/or
a mixture of fullerene derivatives represented by Formula (2):
wherein
R 1 represents an aryl group which optionally has a substituent,
R 2 represents an ester group (—COOR 3 where, R 3 represents an alkyl group) or an alkyl group which optionally has a substituent, and
n represents an integer of 2 and 3, respectively;
a polymer;
a crosslinking agent, the mass ratio of the crosslinking agent relative to the polymer satisfying a range of (10 to 40)/100;
a catalyst that accelerates the crosslinking reaction, the mass ratio of the catalyst relative to the polymer satisfying a range of (1 to 4)/100; and
an organic solvent.
2. The resist underlayer film forming composition according to claim 1 , wherein a fullerene as a framework (skeleton) of the fullerene derivative is any of C 60 , C 70 or a mixture containing C 60 and C 70 .
3. The resist underlayer film forming composition according to claim 1 , wherein the organic solvent contains an organic solvent capable of dissolving the fullerene derivative.