Lower parasitic capacitance FinFET

1. A semiconductor device, comprising: a gate region disposed above a semiconductor substrate and extending in a first longitudinal direction;

a first fin disposed above the semiconductor substrate and extending in a second longitudinal direction such that the first fin intersects the gate region, the first fin having a first sidewall defining a first undercut;

a second fin disposed above the semiconductor substrate and extending in the second longitudinal direction such that the second fin intersects the gate region, the second fin laterally spaced from the first fin and including a second sidewall and defining a second undercut;

a first shallow trench isolation (STI) region formed in the semiconductor substrate between the first and second fins;

a first insulating layer comprising a low-k dielectric disposed between the first and second fins and over an upper surface of the first STI region and below the lowest bottom surface of the conductive layer;

a second insulating material disposed within the first and second undercut and in contact with the first insulating layer over the STI region,

wherein the heights of the first and second insulating layers are same; and

a conductive contact layer disposed over an upper surface of the first insulating layer and on top surfaces of the first and second fins to provide a fin interconnect,

wherein the second insulating layer extends from the first insulating material disposed in the first undercut across the STI region to the first insulating material disposed in the second undercut and electrically insulates the conductive layer from the STI region.

2. The semiconductor device of claim 1 , further comprising:

a third fin disposed above the semiconductor substrate and extending in the second longitudinal direction such that the third fin intersects the gate region, the third fin having a third sidewall laterally spaced from a fourth sidewall of the first fin;

a second STI region formed in the semiconductor substrate between the first and third fins; and

a second insulating layer including the low-k dielectric disposed over and contacting an upper surface of the second STI region and below a lower surface of the conductive layer, the second insulating region extending from the third sidewall to the fourth sidewall.

3. The semiconductor device of claim 2 , wherein the third and fourth sidewalls respectively define third and fourth undercuts, the second insulating material disposed within the third and fourth undercuts, and the second insulating layer extends from the second insulating material in the third undercut across the second STI region to the second insulating material in the fourth undercut.

4. The semiconductor device of claim 2 , wherein the first and second insulating layers are one of an oxide, silicon carbide (SiC), carbon-doped silicon oxide, or fluorine-doped silicon oxide.

5. The semiconductor device of claim 2 , wherein the first and second insulating layers have heights that are approximately 50-75 percent of a height of one of the first, second, or third fins.

6. The semiconductor device of claim 1 , wherein the first insulating layer has a height that is approximately 50-75 percent of a height of the first and second fins as measured from an upper surface of the first STI region.

7. The semiconductor device of claim 6 , wherein the first insulating layer is one of an oxide, silicon carbide, carbon-doped silicon oxide, or fluorine-doped silicon oxide.