Exposure device, exposure method, and method for manufacturing semiconductor device
An exposure device includes a determining unit determines specific transfer patterns, which are transfer patterns of predetermined portions of a unit pattern, among transfer patterns projected through a photomask including an internal pattern having a plurality of unit patterns that is arranged at a predetermined interval and has the same shape, for two or more unit patterns, an error calculating unit calculates an error between the transfer pattern and the specified transfer pattern on the basis of the comparison between the relative position between the specific transfer patterns and a specified value of it, a correction parameter calculating unit calculates correction parameters for correcting the transfer patterns on the basis of the calculated error, and a correction control unit corrects exposure conditions using the correction parameters such that the transfer patterns are corrected.
1. A method for manufacturing a semiconductor device, comprising:
detecting an intensity distribution of light projected through a photomask including an internal pattern which is projected to a portion of a semiconductor wafer to be exposed in which a resist pattern is formed by exposure and said internal pattern includes a plurality of unit patterns that are arranged at a predetermined interval and have a same shape;
determining specific transfer patterns, which are transfer patterns of predetermined portions of said unit patterns, among transfer patterns that are projected through said photomask for two or more unit patterns on the basis of a detection result in said detecting of said intensity distribution of light;
calculating an error between a transfer pattern of said transfer patterns and a specified transfer pattern on the basis of a comparison between a relative position between said specific transfer patterns determined in said determining of said specific transfer patterns and a specified value of said relative position;
calculating correction parameters for correcting said transfer patterns on the basis of said error calculated in said calculating of said error;
correcting exposure conditions using said correction parameters such that said transfer patterns are corrected; and
exposing said semiconductor wafer through said photomask.
2. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
determining alignment mark transfer patterns, which are transfer patterns of alignment marks that are formed at the edge of said photomask and are projected through said photomask, on the basis of said detection result of said intensity distribution of light projected through said photomask;
calculating an error between a position of said alignment mark transfer pattern determined in said determining of said alignment mark transfer patterns and a specified position of said alignment mark transfer pattern;
calculating alignment mark correction parameters for correcting said position of said alignment mark transfer pattern to said specified position, on the basis of said error calculated in said calculating of said error; and
correcting a relative position of said photomask and said substrate such that said position of said alignment mark transfer pattern is corrected to said specified position, using said alignment mark correction parameters.
3. An exposure method, comprising:
detecting an intensity distribution of light projected through a photomask including an internal pattern which is projected to a portion of a substrate to be exposed in which a resist pattern is formed by exposure and said internal pattern includes a plurality of unit patterns that are arranged at a predetermined interval and have a same shape;
determining specific transfer patterns, which are transfer patterns of predetermined portions of said unit patterns, among transfer patterns that are projected through said photomask for two or more unit patterns on the basis of a detection result in said detecting of said intensity distribution of light;
calculating an error between a transfer pattern of said transfer patterns and a specified transfer pattern on the basis of a comparison between a relative position between said specific transfer patterns determined in said determining of said specific transfer patterns and a specified value of said relative position;
calculating correction parameters for correcting said transfer patterns on the basis of said error calculated in said calculating of said error;
correcting exposure conditions using said correction parameters such that said transfer patterns are corrected; and
exposing said substrate through said photomask.