Transistor and method of manufacturing the same
Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
1. A transistor comprising:
a channel layer formed of an oxide semiconductor;
a source and a drain configured to separately contact two end faces of the channel layer in a length direction of the channel layer; and
a gate configured to cover top and side surfaces of the channel layer in a width direction of the channel layer,
wherein the channel layer, the source and the drain have a same width in the width direction of the channel layer, and
wherein the channel layer, the source and the drain constitute a rectangular solid structure.
2. A transistor comprising:
a channel layer formed of an oxide semiconductor;
a source and a drain configured to separately contact two end faces of the channel layer in a length direction of the channel layer; and
a gate configured to cover top and side surfaces of the channel layer in a width direction of the channel layer,
wherein the source and the drain are formed of one of metal and metal oxide, and
wherein the two end faces of the channel layer are plasma treated surfaces contacting the source and the drain so that a Schottky barrier is formed between the source and the channel layer and between the drain and the channel layer.
3. A stacked transistor comprising:
one or more first transistors on a substrate, wherein each of the one or more first transistors includes
a channel layer formed of an oxide semiconductor,
a source and a drain configured to separately contact two end faces of the channel layer in a length direction of the channel layer, and
a gate configured to cover top and side surfaces of the channel layer in a width direction of the channel layer; and
one or more second transistors vertically stacked on the one or more first transistors,
wherein the one or more first transistors are separated from the one or more second transistors by an insulating layer interposed therebetween, and
wherein at least one gate of the one or more first transistors is separated from at least one gate of the one or more second transistors.
4. The stacked transistor of claim 3 , wherein the oxide semiconductor comprises a zinc oxide (ZnO)-based material or an indium oxide (In 2 O 3 )-based material.
5. The stacked transistor of claim 3 , wherein the source and the drain comprise a metal oxide or a metal.
6. The stacked transistor of claim 3 , wherein the two end faces of the channel layer are plasma treated surfaces that contact the source and the drain.
7. The stacked transistor of claim 3 , wherein the source and the drain are oxide semiconductor layers having plasma treated surfaces that contact the two end faces of the channel layer.
8. The stacked transistor of claim 3 , wherein the one or more second transistors have the same structure as the one or more first transistors.
9. The stacked transistor of claim 3 , further comprising:
a first common electrode which is commonly connected to sources of the one or more first transistors and the one or more second transistors;
a second common electrode which is commonly connected to drains of the one or more first transistors and the one or more second transistors; and
a third common electrode which is commonly connected to the gates of the one or more first transistors and the one or more second transistors.
10. The stacked transistor of claim 3 , wherein the two end faces are perpendicular to the length direction of the channel layer.
11. The stacked transistor of claim 3 , wherein a distance between the two end faces corresponds to a total length of the channel layer.
12. The stacked transistor of claim 3 , wherein the gate is configured so as to not cover a bottom surface of the channel layer.
13. The stacked transistor of claim 3 , wherein at least one of the source, the drain, and the channel layer has a plasma treated surface.
14. The stacked transistor of claim 3 , wherein a cross-section of the channel layer has a tetragonal shape, and the gate is configured so as to not cover a bottom surface of the channel layer.
15. The stacked transistor of claim 3 , wherein the channel layer, the source and the drain have a same width in the width direction of the channel layer.
16. The stacked transistor of claim 3 , wherein the channel layer, the source and the drain constitute a rectangular solid structure.
17. The stacked transistor of claim 3 , wherein the channel layer, the source and the drain have a same height.
18. A transistor comprising:
one or more first transistors on a substrate, wherein each of the one or more first transistors includes
a channel layer formed of an oxide semiconductor,
a source and a drain configured to separately contact two end faces of the channel layer in a length direction of the channel layer, and
a gate configured to cover top and side surfaces of the channel layer in a width direction of the channel layer; and
one or more second transistors which are vertically stacked on the one or more first transistors,
wherein the one or more first transistors and the one or more second transistors are divided into first group transistors and second group transistors,
wherein sources, drains, and gates of the first group transistors are commonly connected to first, second, and third common electrodes, respectively, and
wherein sources, drains, and gates of the second group transistors are commonly connected to fourth, fifth, and sixth electrodes, respectively.