Surface acoustic wave device
A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h/λ of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h/λ of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h/λ of the dielectric layer is about 0.2 or less.
1. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate and including a Pt film and an Al film laminated on the Pt film; and
a dielectric layer arranged to cover the IDT electrode on the piezoelectric substrate; wherein
when a wavelength of a surface acoustic wave is defined as λ , a normalized film thickness h/λ of the Al film is about 0.06 ≦h/λ≦ about 0.185, a normalized film thickness h/λ of the Pt film is about 0.005 h/λ≦ about 0.015, and a normalized film thickness h/λ of the dielectric layer is the normalized film thickness of the IDT electrode ≦h/λ about 0.2.
2. The surface acoustic wave device according to claim 1 , wherein the piezoelectric substrate contains LiTaO 3 and the dielectric layer contains a silicon oxide.
3. The surface acoustic wave devices according to claim 2 , wherein a cut angle of the LiTaO 3 is in a range of about 36° to about 49°.
4. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate and including an Au film and an Al film laminated on the Au film; and
a dielectric layer arranged to cover the IDT electrode on the piezoelectric substrate; wherein
when a wavelength of a surface acoustic wave is defined as λ, a normalized film thickness h/λ of the Al film is about 0.06≦h/λ≦ about 0.183, a normalized film thickness h/λ of the Au film is about 0.0056h/λ≦ about 0.017, and a normalized film thickness h/λ of the dielectric layer is the normalized film thickness of the IDT electrode ≦h/λ≦ about 0.2.
5. The surface acoustic wave device according to claim 4 , wherein the piezoelectric substrate contains LiTaO 3 and the dielectric layer contains a silicon oxide.
6. The surface acoustic wave devices according to claim 5 , wherein a cut angle of the LiTaO 3 is in a range of about 36° to about 49°.
7. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate and including an Ag film and an Al film laminated on the Ag film; and
a dielectric layer arranged to cover the IDT electrode on the piezoelectric substrate; wherein
when a wavelength of a surface acoustic wave is defined as λ , a normalized film thickness h/λ of the Al film is about 0.06 ≦h/λ≦ about 0.17, a normalized film thickness h/λ of the Ag film is about 0.01 ≦h/λ≦ about 0.03, and a normalized film thickness h/λ of the dielectric layer is the normalized film thickness of the IDT electrode ≦h/λ≦ about 0.2.
8. The surface acoustic wave device according to claim 7 , wherein the piezoelectric substrate contains LiTaO 3 and the dielectric layer contains a silicon oxide.
9. The surface acoustic wave devices according to claim 8 , wherein a cut angle of the LiTaO 3 is in a range of about 36° to about 49°.
10. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate and including a Cu film and an Al film laminated on the Cu film; and
a dielectric layer arranged to cover the IDT electrode on the piezoelectric substrate; wherein
when a wavelength of a surface acoustic wave is defined as λ , a normalized film thickness h/λ of the Al film is about 0.06 ≦h/λ≦ about 0.164, a normalized film thickness h/λ of the Cu film is about 0.012 ≦h/λ≦ about 0.036, and a normalized film thickness h/λ of the dielectric layer is the normalized film thickness of the IDT electrode ≦h/λ≦ about 0.2.
11. The surface acoustic wave device according to claim 10 , wherein the piezoelectric substrate contains LiTaO 3 and the dielectric layer contains a silicon oxide.
12. The surface acoustic wave devices according to claim 11 , wherein a cut angle of the LiTaO 3 is in a range of about 36° to about 49°.