IP Library Granted Patent US 8,379,296
Granted Patent B2
US 8,379,296 · App. 12/809,103 · Granted Feb 19, 2013

Nonlinear optical CdSiP2 crystal and producing method and devices therefrom

Inventors: Peter G Schunemann (Hollis, NH); Kevin T Zawilski (Arlington, MA)
Assignee: BAE Systems Information and Electronic Systems Integration Inc.
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Quick Facts
Patent No.
US 8,379,296
App. No.
12/809,103
Granted
Feb 19, 2013
Kind
B2
Abstract

CdSiP 2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP 2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP 2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.

Claims (15)

1. A nonlinear optical device comprising a single crystal of CdSiP 2 having NLO properties, said single crystal having a cut and polished incident face and a cut and polished emergent face, whereby at least one incident beam of electromagnetic radiation can be directed into said incident face so as to generate electromagnetic radiation emerging from said emergent face that includes at least one output beam wavelength different from the wavelengths of all incident beams of radiation, and wherein all of said incident and output beams have wavelengths between 0.5 μm and 10 μm.

2. The nonlinear optical device of claim 1 , wherein the single crystal of CdSiP 2 is oriented relative to polarization and propagation directions of the incident radiation so as to allow phase-matched propagation of the incident and emerging radiation.

3. The nonlinear optical device of claim 1 , wherein the single crystal of CdSiP 2 has a total volume of at least 20 mm 3 .

4. The nonlinear optical device of claim 1 , wherein the single crystal of CdSiP 2 is free of cracks, twins, voids, inclusions, grain-boundaries, and all other macroscopic defects throughout all apertures and propagating paths of all electromagnetic waves interacting therein.

5. The nonlinear optical device of claim 1 , wherein the electromagnetic radiation emerging from said crystal includes at least one output wavelength that falls in the range 0.5 μm to 10 μm.

6. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of phase-matched sum frequency generation.

7. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of second harmonic generation.

8. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of phase-matched difference frequency generation.

9. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of phase-matched optical parametric generation.

10. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of phase-matched optical parametric amplification.

11. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for frequency conversion by means of phase-matched optical parametric oscillation.

12. The nonlinear optical device of claim 1 , wherein the electromagnetic radiation emerging from said crystal includes at least one output wavelength of substantially about 6.45 μm.

13. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is configured for non-critical phase matching and the electromagnetic radiation emerging from said crystal is temperature tuned so as to include a wavelength of substantially about 6.45 μm.

14. The nonlinear optical device of claim 1 , wherein the nonlinear optical device is pumped by a solid-state laser having an output wavelength of 1064 nm.

15. The nonlinear optical device of claim 1 , wherein the incident and output beams include a first beam having a wavelength between 1.06 μm and 2 μm and a second beam having a wavelength between 2 μm and 10 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2010
From: SCHUNEMANN, PETER G; ZAWILSKI, KEVIN T
To: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Reel/Frame 024996/0092 →
Continuity (2)
Provisional Application 61107876 · Oct 23, 2008
Related Publication 20110054451A1 · Mar 3, 2011