Reflective electrode, display device, and method for producing display device
A reflective electrode ( 2 ) includes an aluminum alloy layer ( 2 a ) and an aluminum oxide layer ( 2 b ) arranged on or above a substrate and is directly connected to a transparent pixel electrode ( 3 ) without the interposition of a barrier metal layer. The aluminum alloy layer contains 0.1 to 2 atomic percent of nickel or cobalt and 0.1 to 2 atomic percent of lanthanum. The aluminum oxide layer has a ratio [O]/[Al] of the number of oxygen atoms [O] to the number of aluminum atoms [Al] of 0.30 or less. The aluminum oxide layer has a thickness in its thinnest portion of 10 nm or less. The reflective electrode has a high reflectance and a low contact resistance, even when subjected to a heat treatment at a low temperature of 100° C. or higher but 300° C. or lower. The reflective electrode also has excellent thermal stability and does not cause defects such as hillocks.
1. A display device comprising a reflective electrode arranged on or above a substrate and in direct connection with a transparent pixel electrode, wherein the reflective electrode comprises:
a first Al—(Ni/Co)—X alloy layer containing:
0.1 to 2 atomic percent of at least one of nickel (Ni) and cobalt (Co), and
0.1 to 2 atomic percent of X, wherein X is at least one element selected from the group consisting of La, Mg, Mn, Ru, Rh, Pt, Pd, Ir, Ce, Pr, Gd, Tb, Dy, Nb, Mo, W, Eu, Ho, Er, Tm, Yb, and Lu; and
a second aluminum oxide layer containing aluminum (Al) and oxygen (O),
wherein the second aluminum oxide layer is directly connected to the transparent pixel electrode,
wherein the second aluminum oxide layer has a ratio [O]/[Al] of the number of oxygen atoms to the number of aluminum atoms of 0.30 or less,
wherein the second aluminum oxide layer has a thickness in its thinnest portion of 10 nm or less, and
wherein the contact resistance between the reflective electrode and the transparent pixel electrode is 100 μΩ/cm 2 or less.
2. The display device of claim 1 , wherein the first Al—(Ni/Co)—X alloy layer contains 0.1 to 2 atomic percent of Ni.
3. The display device of claim 1 , wherein the first Al—(Ni/Co)—X alloy layer contains 0.1 to 2 atomic percent of at least one of Ni and Co; and 0.1 to 2 atomic percent of lanthanum (La).
4. The display device of claim 3 , wherein the first Al—(Ni/Co)—X alloy layer contains 0.1 to 2 atomic percent of Ni and 0.1 to 2 atomic percent of La.
5. The display device of claim 1 , wherein the first Al—(Ni/Co)—X alloy layer further contains 0.1 to 2 atomic percent of Z, wherein Z is at least one element selected from the group consisting of germanium (Ge), copper (Cu), and silicon (Si).
6. The display device of claim 5 , wherein the first Al—(Ni/Co)—X alloy layer contains 0.1 to 2 atomic percent of at least one of Ni and Co; 0.1 to 2 atomic percent of La; and 0.1 to 2 atomic percent of at least one of Ge and Cu.
7. The display device of claim 1 , wherein the transparent pixel electrode comprises at least one of an indium tin oxide (ITO) and an indium zinc oxide (IZO).
8. A method for producing the display device of claim 1 , the method sequentially comprising:
depositing an Al—(Ni/Co)—X alloy layer on or above a substrate through sputter deposition;
subjecting the deposited Al—(Ni/Co)—X alloy layer to a heat treatment at a temperature of 200° C. or higher in an atmosphere of a vacuum or an inert gas; and
depositing a transparent pixel electrode through sputter deposition.
9. A method for producing the display device of claim 1 , the method sequentially comprising:
depositing an Al—(Ni/Co)—X alloy layer on or above a substrate through sputter deposition; and
depositing a transparent pixel electrode on or above the deposited Al—(Ni/Co)—X alloy layer through sputter deposition, wherein the sputter deposition is performed in a deposition atmosphere containing a nitrogen component at least in the early stage of the sputter deposition.
10. A method for producing the display device of claim 1 , the method sequentially comprising:
depositing an Al—(Ni/Co)—X alloy layer on or above a substrate through sputter deposition;
subjecting the deposited Al—(Ni/Co)—X alloy layer to reverse sputtering; and
depositing a transparent pixel electrode through sputter deposition.
11. The method of claim 8 , wherein the Al—(Ni/Co)—X alloy layer further contains 0.1 to 2 atomic percent of Z, wherein Z is at least one element selected from the group consisting of Ge, Cu, and Si.
12. The method of claim 9 , wherein the Al—(Ni/Co)—X alloy layer further contains 0.1 to 2 atomic percent of Z, wherein Z is at least one element selected from the group consisting of Ge, Cu, and Si.
13. The method of claim 10 , wherein the Al—(Ni/Co)—X alloy layer further contains 0.1 to 2 atomic percent of Z, wherein Z is at least one element selected from the group consisting of Ge, Cu, and Si.
14. The display device of claim 1 , wherein the contact resistance between the reflective electrode and the transparent pixel electrode is 70 μΩ/cm 2 or less.
15. The display device of claim 1 , wherein the contact resistance between the reflective electrode and the transparent pixel electrode is 70 μΩ/cm 2 or less and the second aluminum oxide layer has a ratio [O]/[Al] of the number of oxygen atoms to the number of aluminum atoms of 0.13 to 0.29.
16. The display device of claim 1 , wherein the first Al—(Ni/Co)—X alloy layer consists essentially of an Al—Co—X alloy layer.