Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions.
1. A method of forming GaN-based devices and Si-based devices on a Si substrate, comprising:
depositing an implant-stop layer over the Si substrate;
patterning the implant-stop layer to cover regions of the Si substrate;
performing ion implantation to implant carbon into regions of the Si substrate uncovered by the implant-stop layer to form carbon implant regions;
performing annealing to form SiC crystalline regions in the carbon implant regions;
forming the GaN-based devices on the SiC crystalline regions and forming the Si-based devices on the covered regions of the Si substrate, wherein the implant-stop layer is removed prior to the forming of the Si-based devices.
2. The method of claim 1 , wherein the ion implantation is performed at a temperature in a range from about 500° C. to about 900° C.
3. The method of claim 1 , wherein the annealing is performed at a temperature in a range between about 900° C. and about 1200° C., and the annealing is performed in an annealing equipment for a process selected from a group consisting of rapid thermal anneal, flash anneal, laser anneal, and a furnace anneal.
4. The method of claim 1 , wherein the annealing is performed at a temperature and for a duration, which depend on a temperature of the ion implantation being performed.
5. The method of claim 1 , wherein a dose of the carbon implanted is in a range between about 1E16 ions/cm 2 and about 1E19 ions/cm 2 .
6. The method of claim 1 , wherein materials to make the GaN-based devices include GaN and AlGaN.
7. The method of claim 1 , wherein the SiC crystalline regions in the carbon implant regions have a thickness between about 1 μm and about 8 μm.
8. The method of claim 1 , wherein the implant-stop layer is made of a dielectric material and has a thickness in a range from about 100 Å to about 5000 Å.
9. The method of claim 1 , wherein each GaN-based device is selected from a group consisting of a light-emitting device, a power switching device, a regulator, a battery protector, a panel display driver, and a telecommunication device.
10. A method of forming GaN-based devices and Si-based devices on a Si substrate, comprising:
depositing an implant-stop layer over the Si substrate;
patterning the implant-stop layer to cover regions of the Si substrate;
performing ion implantation to implant carbon into regions of the Si substrate uncovered by the implant-stop layer to form carbon implant regions, wherein the ion implantation is performed at a temperature between about 500° C. and about 900° C.; and
forming the GaN-based devices on SiC crystalline regions in the carbon implant regions and forming the Si-based devices on the covered regions of the Si substrate, wherein the implant-stop layer is removed prior to the forming of the Si-based devices.
11. The method of claim 10 , further comprising:
performing annealing to form the SiC crystalline regions in the carbon implant regions after the ion implantation is performed, wherein the annealing is performed at a temperature in a range between about 900° C. to and about 1200° C. in a rapid thermal processing system.
12. A method of forming a GaN-based device and a Si-based device on a Si substrate, comprising:
forming an implant-stop layer on the Si substrate and covering a portion of the Si substrate;
implanting carbon ions into a region of the Si substrate not covered by the implant-stop layer to form a carbon implant region, using a hot implantation process;
annealing the Si substrate to form a SiC crystalline region in the carbon implant region adjacent to a silicon region of the Si substrate under the implant-stop layer;
depositing a GaN-based material on the SiC crystalline region to form the GaN-based device, and forming the Si-based device on the covered portion of the Si substrate wherein the implant-stop layer is removed prior to forming the Si-based device.
13. The method of claim 12 , wherein the implanting is performed at a temperature in a range from about 500° C. to about 900° C.
14. The method of claim 12 , wherein the annealing is performed at a temperature in a range between about 900° C. and about 1200° C., and the annealing is performed in an annealing equipment for a process selected from a group consisting of rapid thermal anneal, flash anneal, laser anneal, and a furnace anneal.
15. The method of claim 12 , wherein the annealing is performed at a temperature and for a duration, which depend on a temperature of the implanting being performed.
16. The method of claim 12 , wherein a dose of the carbon implanted is in a range between about 1E16 ions/cm2 and about 1E19 ions/cm 2 .
17. The method of claim 12 , wherein the GaN-based material includes GaN and AlGaN.
18. The method of claim 12 , wherein the SiC crystalline region in the carbon implant region has a thickness between about 1 μm and about 8 μm.
19. The method of claim 12 , wherein the implant-stop layer is made of a dielectric material and has a thickness in a range from about 100 Å to about 5000 Å.