Thin film capacitor and method of fabrication thereof
Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning of the metal substrate from its non-coated face, and subsequently forming a copper electrode on the thinned, non-coated face of the substrate.
1. A method of fabricating a capacitor, the method comprising:
coating a first surface of a non-copper metal substrate with a buffer layer, wherein the non-copper metal substrate includes the first surface and a second surface;
depositing a dielectric material on the first surface of the non-copper metal substrate to form a dielectric layer thereon, wherein the buffer layer includes a material configured to retard diffusion of oxygen or metals from the non-copper metal substrate into the dielectric material;
depositing a first conductive material on the dielectric layer to form a first electrode thereon;
removing metal from the second surface of the non-copper metal substrate to reduce the thickness of the non-copper metal substrate; and
depositing a second conductive material on the second surface of the non-copper metal substrate to form a second electrode thereon.
2. The method of claim 1 , wherein the non-copper metal substrate has a substantially uniform thickness.
3. The method of claim 1 , wherein the non-copper metal substrate comprises a foil.
4. The method of claim 1 , wherein the non-copper metal substrate comprises nickel.
5. The method of claim 1 , further comprising annealing the non-copper metal substrate before said depositing a dielectric material.
6. The method of claim 5 , wherein said annealing the non-copper metal substrate comprises heating the non-copper metal substrate at a temperature greater than or equal to about 35 percent of a melting point temperature of the non-copper metal substrate for a period of time of at least about 30 minutes.
7. The method of claim 1 , further comprising polishing the first surface of the non-copper metal substrate before said depositing a dielectric material thereon.
8. The method of claim 7 , wherein said polishing the first surface of the non-copper metal substrate provides thereon a topographical roughness with a root mean square of equal to or less than about 100 nanometers for a surface profilometric sampling length of about 71 microns.
9. The method of claim 1 , wherein said coating a first surface of a non-copper metal substrate with a buffer layer is performed before said depositing a dielectric material thereon.
10. The method of claim 1 , wherein at least one of the first conductive material or the second conductive material comprises copper.
11. The method of claim 1 , wherein said removing metal from the second surface of the non-copper metal substrate comprises exposing the second surface of the non-copper metal substrate to an electrochemical bath.
12. The method of claim 1 , further comprising:
annealing the non-copper metal substrate before said depositing a dielectric material; and
polishing the first surface of the non-copper metal substrate before said depositing a dielectric material thereon.
13. The method of claim 1 , further comprising:
annealing the non-copper metal substrate before said depositing a dielectric material; and
wherein said coating a first surface of a non-copper metal substrate with a buffer layer is performed before said depositing a dielectric material thereon.
14. The method of claim 1 , further comprising:
annealing the non-copper metal substrate before said depositing a dielectric material;
polishing the first surface of the non-copper metal substrate before said depositing a dielectric material thereon; and
wherein said coating a first surface of a non-copper metal substrate with a buffer layer is performed before said depositing a dielectric material thereon.