Color selective photodetector and methods of making
A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.
1. A device comprising:
a first electrode and a second electrode;
a plurality of semiconductor nanowires in electrical communication with the first electrode and the second electrode;
a J-aggregate electrostatically associated with at least a portion of the plurality of semiconductor nanowires.
2. The device of claim 1 , wherein the plurality of semiconductor nanowires includes a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group IV compound, a Group II-IV-V compound, or a mixture thereof.
3. The device of claim 2 , wherein the plurality of semiconductor nanowires includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, Si, Ge, or a mixture thereof.
4. The device of claim 3 , the plurality of semiconductor nanowires includes a ligand bound to a surface of the semiconductor nanowire, wherein the ligand includes a first moiety having an affinity for a surface of the nanowire, and a second moiety bearing an electrostatic charge.
5. The device of claim 4 , wherein the J-aggregate bears an electrostatic charge opposite to the electrostatic charge of the second moiety.
6. The device of claim 4 , wherein the ligand is a polydentate ligand.
7. The device of claim 4 , wherein the ligand includes more than one moiety bearing an electrostatic charge.
8. The device of claim 4 , wherein the ligand is an oligomer or polymer.
9. A method of making a device, comprising:
forming a plurality of semiconductor nanowires;
contacting the plurality of semiconductor nanowires with a ligand, wherein the ligand includes a first moiety having an affinity for a surface of the nanowire, and a second moiety bearing an electrostatic charge;
contacting the plurality of semiconductor nanowires with a J-aggregate; and
arranging the plurality of semiconductor nanowires in electrical communication with a first electrode and a second electrode.
10. The method of claim 9 , wherein the plurality of semiconductor nanowires includes a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group IV compound, a Group II-IV-V compound, or a mixture thereof.
11. The method of claim 10 , wherein the plurality of semiconductor nanowires includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, Si, Ge, or a mixture thereof.
12. The method of claim 9 , wherein forming the plurality of semiconductor nanowires includes:
contacting a first electrode and a second electrode with a reactant solution; and
applying an electric field across the first electrode and the second electrode, wherein at least one electrode includes a catalyst.
13. The method of claim 12 , wherein the first electrode and the second electrode are supported on a substrate.
14. The method of claim 12 , wherein the substrate includes glass, quartz, or silicon.
15. The method of claim 12 , wherein the first electrode and the second electrode are facing electrodes separated by a gap.
16. The method of claim 15 , wherein the gap is between 10 nm and 100 microns in width.
17. The method of claim 12 , wherein at least one electrode includes platinum and titanium.
18. The method of claim 12 , wherein the catalyst includes a seed particle.
19. The method of claim 12 , wherein the catalyst includes bismuth.
20. The method of claim 12 , further comprising heating the reactant solution to a growth temperature between 120° C. and 400° C.
21. The method of claim 12 , wherein the reactant solution includes a metal source and a chalcogenide source.
22. The method of claim 21 , wherein the metal source includes cadmium.
23. The method of claim 22 , wherein the chalcogenide source includes selenium.