Magnetic tunnel junction device
The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
1. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising:
a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
at least said first ferromagnetic material layer is crystallized and comprises CoFeB alloy.
2. The magnetoresistive device according to claim 1 , wherein said second ferromagnetic material layer is also crystallized and comprises CoFeB alloy.
3. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising:
a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
wherein at least said first ferromagnetic material layer is entirely crystallized and comprises CoFeB alloy.
4. The magnetoresistive device according to claim 3 , wherein said second ferromagnetic material layer is also entirely crystallized and comprises CoFeB alloy.