Methods of embedding thin-film capacitors into semiconductor packages using temporary carrier layers
Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.
1. A method of making a semiconductor package, the method comprising:
providing a thin-film capacitor, wherein the thin-film capacitor includes a first electrode and a second electrode separated by a dielectric;
applying a temporary carrier layer to the first electrode after said providing a thin-film capacitor;
patterning the second electrode;
providing a printed wiring board (PWB) core and a build-up material, wherein the PWB core includes a first electrically-conductive pad on a first surface, a second electrically-conductive pad on a second surface opposite the first surface, and an electrically-conductive via electrically connecting the first electrically-conductive pad to the second electrically-conductive pad;
placing the build-up material between the PWB core and the patterned second electrode of the thin-film capacitor;
laminating the patterned electrode side of the thin-film capacitor to the PWB core by way of the build-up material;
removing the temporary carrier layer after said laminating; and
patterning the first electrode.
2. The method of claim 1 , wherein the first electrode comprises a ferromagnetic metal and the temporary carrier layer comprises a magnetic carrier layer.
3. The method of claim 2 , wherein the temporary carrier layer is maintained adjacent to the first electrode by a magnetic attraction between the temporary carrier layer and the first electrode without assistance from an adhesive material.
4. The method of claim 1 , wherein the temporary carrier layer comprises a rigid substrate applied to the first electrode using an adhesive.
5. The method of claim 1 , wherein the temporary carrier layer comprises a copper clad applied to the first electrode using an adhesive.
6. The method of claim 5 , wherein the copper clad comprises an epoxy glass layer and a copper thin film layer located on the epoxy glass layer.
7. A semiconductor package formed according to the method of claim 1 , wherein the semiconductor package comprises:
a thin-film capacitor including a first patterned electrode and a second patterned electrode separated by a dielectric;
a printed wiring board (PWB) core including a first electrically-conductive pad on a first surface, a second electrically-conductive pad on a second surface opposite the first surface, and an electrically-conductive via electrically connecting the first electrically-conductive pad to the second electrically-conductive pad; and
a build-up material positioned between the PWB core and the second patterned electrode of the thin-film capacitor, wherein the thin-film capacitor is laminated to the PWB core by way of the build-up material.
8. The semiconductor package of claim 7 , wherein the dielectric comprises a ferroelectric ceramic.
9. The semiconductor package of claim 7 , wherein the first patterned electrode comprises a ferromagnetic metal.
10. The semiconductor package of claim 7 , further comprising an electrically-conductive material formed over the second patterned electrode.
11. The semiconductor package of claim 7 , wherein the PWB core further comprises a dielectric material through which the electrically-conductive via is formed and a tooling hole formed through the dielectric material.
12. The semiconductor package of claim 7 , further comprising a second electrically-conductive via electrically connecting the first electrically-conductive pad to the first patterned electrode.
13. The method of claim 1 , wherein the dielectric comprises a ferroelectric ceramic.
14. The method of claim 1 , further comprising forming a layer of electrically-conductive material on the patterned second electrode.
15. The method of claim 14 , wherein the layer of electrically-conductive material spans a plurality of patterned electrodes.
16. The method of claim 1 , wherein said applying a temporary carrier layer to the first electrode comprises applying a tape to the first electrode after said providing a thin-film capacitor, wherein said removing the temporary carrier layer comprises removing the tape after said laminating, and wherein the tape includes a film layer and an adhesive layer.