Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain
A method to reduce contact resistance of n-channel transistors by using a III-V semiconductor interlayer in source and drain is generally presented. In this regard, a device is introduced comprising an n-type transistor with a source region and a drain region a first interlayer dielectric layer adjacent the transistor, a trench through the first interlayer dielectric layer to the source region, and a conductive source contact in the trench, the source contact being separated from the source region by a III-V semiconductor interlayer. Other embodiments are also disclosed and claimed.
1. A method to make a contact, comprising:
depositing a dielectric layer on a substrate having a transistor;
etching a first opening in the dielectric layer that extends to a source region;
forming a III-V semiconductor layer on the source region;
forming a contact metal on the III-V semiconductor layer, the III-V semiconductor layer separating the contact metal from the source region; and
filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
2. The method of claim 1 , wherein the III-V semiconductor layer has a thickness of between about 1 and 50 nanometers.
3. The method of claim 1 , wherein forming the III-V semiconductor layer comprises a technique chosen from the group consisting of: Metallorganic Vapor Phase Epitaxy (MOVPE), Metallorganic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Metallorganic Molecular Beam Epitaxy (MOMBE), Migration Enhanced Molecular Beam Epitaxy (MEE-MBE), Atomic Layer Epitaxy (ALE), Atomic Layer Deposition (ALD), and Physical Vapor Deposition (PVD).
4. The method of claim 1 , wherein forming the III-V semiconductor layer comprises annealing.
5. The method of claim 1 , wherein the transistor is a multigate transistor, wherein the III-V semiconductor layer is formed on a top and on side walls of a fin of the multigate transistor to result in an III-V semiconductor top and III-V semiconductor side walls, and wherein the contact metal is formed on the III-V semiconductor top and on the III-V semiconductor side walls.
6. A device, comprising:
an n-type transistor with a source region and a drain region;
a first interlayer dielectric layer adjacent the transistor;
a trench through the first interlayer dielectric layer to the source region; and
a conductive source contact in the trench, the source contact being separated from the source region by a III-V semiconductor interlayer.
7. The device of claim 6 , wherein the transistor is a multigate transistor including a fin.
8. The device of claim 7 , wherein the III-V semiconductor layer is on a top surface and side walls of the fin.
9. The device of claim 6 , wherein the III-V semiconductor layer has a thickness of between about 1 and 50 nanometers.
10. The device of claim 6 , further comprising:
a second interlayer dielectric layer;
a first metallization layer adjacent the second interlayer dielectric layer and having a plurality of conductive vias and a plurality of conductive lines;
a third interlayer dielectric layer over the second interlayer dielectric layer;
a second metallization layer adjacent the third interlayer dielectric layer and having a plurality of conductive vias and a plurality of conductive lines; and
wherein at least some of the plurality of conductive vias and the plurality of conductive lines of the first metallization layer and at least some of the plurality of conductive vias and the plurality of conductive lines of the second metallization layer are conductively connected to the conductive source contact.
11. The device of claim 6 , wherein the source region comprises a raised source formed on a substrate surface.
12. The device of claim 11 , wherein the raised source comprises group IV material.
13. The device of claim 11 , wherein the raised source comprises doped compounds.
14. The device of claim 6 , wherein the III-V interlayer comprises compounds chosen from the group consisting of: InAs, InGaAs, InSb, GaSb, and GaInAsSbP.
15. The device of claim 6 , wherein the III-V interlayer comprises doped compounds.
16. A device, comprising:
a p-n junction with a p-type semiconductor region and a n-type semiconductor region, wherein the p-type semiconductor region comprises a raised source formed on a substrate surface; and
a conductive contact, wherein the conductive contact is not directly adjacent the p-type semiconductor region, and wherein a III-V semiconductor layer separates the conductive contact from the p-type semiconductor region.
17. The device of claim 16 , wherein the p-n junction comprises a portion of a device chosen from the group consisting of: diode, transistor, photo-detector, infrared detector, solar cell, and LED.
18. The device of claim 16 , wherein the III-V semiconductor layer comprises a material chosen from the group consisting of: InAs, InGaAs, InSb, GaSb, and GaInAsSbP.
19. The device of claim 16 , wherein the n-type semiconductor region comprises a material chosen from the group consisting of: Group IV, Group III-V, Group II-VI, and Group IV-VI material.