Semiconducting component including 1-[3-aryl-isoindolyl-(1)-imino]-3-aryl-IH-isoindole
The present invention relates to an organic semiconductor element that comprises multiple layers. One or more layers may include compounds that can function as light absorbers, charge transporting materials, and/or as a dopant.
1. A semiconductor component comprising multiple layers, wherein at least one of the layers includes at least one compound having general formula A, B or C:
wherein M is a metal ion; R is selected independently in each case from the group consisting of, unsubstituted or substituted, C 1 -C 20 alkyl, C 1 -C 20 heteroalkyl, C 6 -C 20 aryl, C 6 -C 20 heteroaryl, saturated or unsaturated carbocyclic, and saturated or unsaturated heterocyclic compounds; L 1 and L 2 may be the same or different, and represent atomic or molecular assemblies that completely fill the valence shell of M; and —Xi— represents a molecular fragment that together with the adjacent C—C double bond of the pyrrole ring forms an aromatic or heteroaromatic structure element.
2. The semiconductor component as recited in claim 1 , wherein M stands for a metal ion that is selected from the ions of the elements in groups 9 to 13 of the Periodic Table.
3. The semiconductor component as recited in claim 1 , wherein each Xi is selected independently from structures X 1 to X 11 :
wherein R 1 -R 7 are selected independently from the group consisting of hydrogen, halogen, C 1 -C 20 alkyl, C 1 -C 20 heteroalkyl, C 6 -C 20 aryl, C 6 -C 20 heteroaryl, saturated or unsaturated carbocyclic, and saturated or unsaturated heterocyclic compounds, wherein each C 1 -C 20 alkyl, C 1 -C 20 heteroalkyl, C 6 -C 20 aryl, and C 6 -C 20 heteroaryl is independently substituted or unsubstituted, and wherein the carbocyclic and heterocyclic rings comprise one member or two adjacent members of R 1 -R 7 ; and wherein Q stands for a divalent atomic assembly that comprises at least one of the elements C, N, O or S.
4. The semiconductor component as recited in claim 1 , wherein L 1 and L 2 are chosen independently from the group consisting of halogen, alkyl, aryl, alkyloxy, aryloxy, acyl, aroyl, alkenyl, and alkinyl; or wherein L 1 and L 2 are each bound to an R.
5. The semiconductor component as recited in claim 1 , wherein at least one layer comprising the compound of formula A, B, or C is a is a light absorber layer or a charge carrier transport layer.
6. The semiconductor component as recited in claim 5 , wherein the charge carrier transport is a doped or partially doped transport layer.
7. The semiconductor component as recited in claim 1 , wherein the component is a photoactive component.
8. The semiconductor component as recited in claim 1 , wherein the multiple layers are structured in a pin, nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin, pipn structure, or any combination thereof.
9. The semiconductor component as recited in claim 1 , wherein the component is an organic semiconductor component.
10. The semiconductor component as recited in claim 1 , wherein the structure element is selected from an organic solar cell, a photodetector, or an organic field effect transistor.
11. The semiconductor component as recited in claim 1 , wherein the metal ion has a charge of such magnitude that electroneutral complexes of type B or C are created.
12. The semiconductor component as recited in claim 2 , wherein the metal ion is selected from Co, Ni, Cu, Zn, Hg, B, or Al.